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Theory of Optical Transitions in SinGen(001) Strained Layer Superlattices

Published online by Cambridge University Press:  26 February 2011

Mark S. Hybertsen  and
Michael Schlüter
Mark S. Hybertsen
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Michael Schlüter
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
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Abstract

Systematic trends for the minimum gap and low-lying direct optical transitions for superlattices alternating 2, 4 or 6 atomic layers of Si and Ge grown on Si(001) and Ge(001) substrates are calculated using the local density functional approach. Results of a many-body self energy calculation for the optical transition energies of the Si4Ge4/Si(001) case are compared to photocurrent and electroreflectance data. Emphasis is placed on the narrow type II heterostructure formed by the Si4Ge4 region between the Si(001) substrate and cap layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 413
Copyright
Copyright © Materials Research Society 1988

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References

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