Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-04-27T15:12:45.078Z Has data issue: false hasContentIssue false
  • English
  • Français

Theory of Reactive Adsorption on Si(100)

Published online by Cambridge University Press:  03 September 2012

D. J. Doren ,
A. Robinson Brown  and
R. Konecny
D. J. Doren
Affiliation:
Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, doren@udel.edu
A. Robinson Brown
Affiliation:
Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, doren@udel.edu
R. Konecny
Affiliation:
Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, doren@udel.edu
Get access

Abstract

Density functional calculations on cluster models of Si(100)-2xl have been used to predict reaction mechanisms and energetics for several reactive adsorption processes. Dissociative adsorption of H2, H20, BH3, and SiH4 will be described and compared to available experimental data. Based on these examples, a qualitative theory of mechanisms for dissociative adsorption of hydrides on silicon surfaces will be proposed. These reactions can largely be understood in terms of the electron density distributions in the molecule and surface dimer. On a buckled dimer, there are both electron-rich and electron-deficient sites, which have different chemical interactions with adsorbates. The role of this difference is illustrated in a novel surface Diels-Alder reaction, for which symmetric addition to an unbuckled surface dimer is allowed by orbital symmetry. This reaction creates new reactive surface sites that may be useful for subsequent chemical surface modification.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 448: Symposium M – Control of Semiconductor Surfaces and Interfaces , 1996 , 45
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Becke, A. D., Phys. Rev. A 38, 3098 (1988).Google Scholar
2 Lee, C., Yang, W. and Parr, R. G., Phys. Rev. B, 37 785 (1988).Google Scholar
3 Pai, S., and Doren, D. J., J. Chem. Phys., 103, 1232 (1995).Google Scholar
4 Konecnyand, R., Doren, D. J., J. Chem. Phys,in press.Google Scholar
5 Kolasinski, K., Int. J. Mod., Phys. B, 9 2753 (1995).Google Scholar
6 Doren, D.J., Adv. Chem. Phys., 95, 1 (1996).Google Scholar
7 Gates, S. M., Greenlief, C. M., Beach, D.B. and Holbert, P.A., J. Chem. Phys., 92, 3144 (1990).Google Scholar
8 Buss, R.J., Ho, P., Breiland, W.G. and Coltrin, M. E., J. Appl. Phys., 63, 2808 (1988).Google Scholar
9 Jones, M. E., Xia, L. Q., Maity, N. and Engstrom, J. R., Chem. Phys. Lett. 229, 401 (1994).Google Scholar
10 Dobbs, K. D. and Doren, D. J., J. Am. Chem. Soc., 115, 3731, (1993).Google Scholar