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Theory of Semiconductor Heterojunctions

Published online by Cambridge University Press:  15 February 2011

J. Pollmann  and
A. Mazur
J. Pollmann
Affiliation:
Institut für Physik, Universitat Dortmund, D–4600 Dortmund 50, (F.R.G.)
A. Mazur
Affiliation:
Institut für Physik, Universitat Dortmund, D–4600 Dortmund 50, (F.R.G.)
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Abstract

A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems. The results of involved calculations are interpreted in terms of simple physically appealing pictures by directly relating the changes in bonds across an interface to the resulting bands in the interface band structure. The meaning of the results for the transport properties of semiconductor heterojunctions is briefly assessed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 18: Symposium C – Interfaces and Contacts , 1982 , 257
Copyright
Copyright © Materials Research Society 1982

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