Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-24T20:48:36.953Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal detection mechanism of SiC-Based Resistive Gas Sensors

Published online by Cambridge University Press:  01 February 2011

Timothy J. Fawcett ,
Meralys Reyes ,
Anita Lloyd Spetz ,
Stephen E. Saddow  and
John T. Wolan
Timothy J. Fawcett
Affiliation:
tfawcett@eng.usf.edu, University of South Florida, Chemical Engineering, 4202 E. Fowler Ave. ENB 118, Tampa, FL, 33620, United States, 813-974-8307, 813-974-3651
Meralys Reyes
Affiliation:
mreyesne@eng.usf.edu, University of South Florida, Chemical Engineering, Tampa, FL, 33620, United States
Anita Lloyd Spetz
Affiliation:
spetz@ifm.liu.se, Linköping University, S-SENCE and Division of Applied Physics, Linköping, N/A, SE-581 83, Sweden
Stephen E. Saddow
Affiliation:
saddow@eng.usf.edu, University of South Florida, Electrical Engineering, Tampa, FL, 33620, United States
John T. Wolan
Affiliation:
wolan@eng.usf.edu, University of South Florida, Chemical Engineering, Tampa, FL, 33620, United States
Get access

Abstract

Silicon carbide-based resistive gas sensors from our laboratory have been previously reported to detect hydrogen at concentrations ranging from less than 1% to 100% H2 in Ar and at temperatures ranging from 50°C to 450°C. The gas sensing mechanism for these devices was not well understood, hindering further improvement in this technology. In this report, resistive devices built on a thin 3C-SiC epitaxial layer grown on 150Å thick Si layer wafer bonded to a polycrystalline SiC substrate were studied. The polycrystalline SiC substrate is insulating, allowing the formation of isolated epitaxy resistors on the 3C-SiC layer. The gas sensing devices consisted of rectangular ohmic NiCr contacts with a Au overlayer fabricated on the 3C-SiC surface. Under a constant dc bias, nominally 10V in this study, these sensors demonstrated a decrease in current of up to ~25.4 mA upon the introduction of 100% H2, relative to 100% N2 in the test gas stream. The time constant for this device, estimated as a first-order exponential decay, was ~16-22 sec, with the full response occurring after ~90-120 sec. Upon the introduction of 100% H2 to the sensing environment, the device temperature, as measured by an resistance temperature detector (RTD) in intimate thermal contact with the device, decreased from 400°C to 237°C (ΔT = ~163°C). This large decrease in device temperature was driven by increased heat transfer coefficient of H2 relative to N2. The sensitivity to CH4 in N2, CO2 in N2 and He in Ar was also tested. Sensitivities, defined as the smallest change in concentration, as low as 300 ppm H2 in N2 were achieved with devices operating at 400°C and 10 V dc. Details of the device performance and a model of the sensing mechanism will be discussed.

Keywords

thermal conductivityHsensor
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 911: Symposium B – Silicon Carbide 2006 – Materials, Processing and Devices , 2006 , 0911-B12-06
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Schalwig, J., Braunmuhl, C. B.-v., Muller, G., and Lee, A., SAE Technical Paper Series, 2002-01-1095.Google Scholar
2 Wingbrant, H., Svenningstorp, H., Salomonsson, P., Tengstrom, P., Lundstrom, I., and Spetz, A. L., Sensors and Actuators B 93, 295–303 (2003).Google Scholar
3 Hunter, G. W., Chen, L.-Y., Neudeck, P. G., Knight, D., Liu, C.-C., Wu, Q.-H., and Zhou, H.-J., NASA Technical Memo 107444 (1997).Google Scholar
4 Andersson, M., Ljung, P., Mattsson, M., Löfdahl, M., and Spetz, A. L., Topics in Catalysis 30–31 (1), 365–368 (2004).Google Scholar
5 Neudeck, P. G., Okojie, R. S., and Chen, L.-Y., Proceedings of the IEEE 90 (6), 1065–176 (2002).Google Scholar
6 Spetz, A. L., Nakagomi, S., and Savage, S., in Advances in silicon carbide processing and applications, edited by Saddow, S. E. and Agrawal, A. (Artech House, Boston, 2004).Google Scholar
7 Fawcett, T. J., Wolan, J. T., Myers, R. L., Walker, J., and Saddow, S. E., Applied Physics Letters 85 (3), 416–418 (2004).Google Scholar
8 Fawcett, T. J., Wolan, J. T., Myers, R. L., Walker, J., and Saddow, S. E., Materials Science Forum 457–460, 1499–1502 (2004).Google Scholar
9 Myers, R. L., Saddow, S. E., Rao, S., Hobart, K. D., Fatemi, M., and Kub, F. J., Materials Science Forum 457–460, 1511–1514 (2004).Google Scholar
10 Reyes, M., Shishkin, Y., and Saddow, S. E., ibid. 11. Available from Precision Resistor Company, Inc.Google Scholar
11 Ashcroft, N. W. and Mermin, N. D., Solid state physics (Brooks/Cole, London, 1976).Google Scholar
12 Bird, R. B., Stewart, W. E., and Lightfoot, E. N., Transport phenomena, 2nd ed. (Wiley, New York, 2002).Google Scholar
13 Herwaarden, S. v. and Meijer, G. C. M., in Semiconductor sensors, edited by Sze, S. M. (Wiley, New York, 1994).Google Scholar