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Thermal Spike Model of Ion-Induced Grain Growth

Published online by Cambridge University Press:  25 February 2011

Dale E. Alexander  and
Gary S. Was
Dale E. Alexander
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL 60439
Gary S. Was
Affiliation:
Department of Nuclear Engineering, University of Michigan, Ann Arbor, MI 48109
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Abstract

A thermal spike model has been developed to describe the phenomenon of ion irradiation-induced grain growth in metal alloy thin films. In single phase films where the driving force for grain growth is the reduction of grain boundary curvature, the model shows that ion-induced grain boundary mobility, Mion, is proportional to the quantity FD 2/ΔHcoh 3, where FD is the ion and recoil energy deposited in nuclear interactions and ΔHcoh is the cohesive energy of the element or alloy. Experimental grain growth results from ion irradiated coevaporated binary alloy films compare favorably with model predictions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 205
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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