Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-18T18:46:47.626Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Stresses in Passivated AlSiCu-Lines From Wafer Curvature Measurement

Published online by Cambridge University Press:  21 February 2011

U. Burges ,
H. Helneder ,
M. Schneegans ,
D. Beckers ,
M. Hallerbach ,
H. Schroeder  and
W. Schilling
U. Burges
Affiliation:
Siemens AG HL PES, Otto-Hahn-Ring 6, D-81739 München, Germany,
H. Helneder
Affiliation:
Siemens AG HL PES, Otto-Hahn-Ring 6, D-81739 München, Germany,
M. Schneegans
Affiliation:
Siemens AG HL PES, Otto-Hahn-Ring 6, D-81739 München, Germany,
D. Beckers
Affiliation:
IFF, Forschungszentrum Jülich, D-52425 Jülich, Germany
M. Hallerbach
Affiliation:
IFF, Forschungszentrum Jülich, D-52425 Jülich, Germany
H. Schroeder
Affiliation:
IFF, Forschungszentrum Jülich, D-52425 Jülich, Germany
W. Schilling
Affiliation:
IFF, Forschungszentrum Jülich, D-52425 Jülich, Germany
Get access

Abstract

A wafer curvature technique was used to measure the mechanical stresses during thermal cycling and the isothermal stress relaxation in passivated Ti/TiN/AlSi(l%)Cu(0.5%)-lines (aspect ratio: 0.92) in the in-plane directions, parallel and perpendicular to the lines. The evaluation of the measured curvature data is explained in detail. The evaluation procedure was tested with the help of passivated SiO2-lines in which the stresses can be calculated because both, the SiO2-lines and the passivation, behave elastically. Comparision to elastic Finite-Element-Method calculations show excellent agreement. The main results are:

  1. a) During thermal cycling all stresses in the AlSiCu-lines vary linearly with temperature without significant hysteresis. The stress parallel to the lines is higher than perpendicular to the lines. X-ray stress data from the same sample confirm the wafer curvature data and show, additionally, that the stresses in the two directions perpendicular to the lines are equal.

  2. b) The isothermal stress relaxation depends strongly on the temperature with a maximum at 250°C. Void formation and growth probably control the observed relaxation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 423
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Tezaki, A., Mineta, T., Egawa, H.; IEEE/IRPS (1990), 221Google Scholar
[2] Besser, P.R., Sauter Mack, A., Fraser, D. and Bravman, J.C., Mat. Res. Soc. Symp. Proc. Vol. 309, 287 (1993)Google Scholar
[3] Moske, M.A., Ho, P.S., Mikalsen, D.J., Cuomo, J.J. and Rosenberg, R., J. Appl. Phys. 74, 1716 and 1725 (1993)Google Scholar
[4] Burges, U., Helneder, H., Körner, H., Schroeder, H. and Schilling, W., MRS Symp. Proc. Vol. 338, 247 (1994)Google Scholar
[5] Pill-Kaufmann, W., Reports of the Forschungszentrum Jülich, JÜL-2436 (1991)Google Scholar
[6] Brenner, A., Senderoff, S., J. of Research of the NBS, 42, 105 23, (1949)Google Scholar
[7] Hsueh, C.H., Evans, A.G., J. Am. Soc., 68, 24148, (1985)Google Scholar
[8] Korhonen, M.A., Black, R.D., Che-Yu, Li, J. Appl. Phys. 69 (3) (1991)Google Scholar
[9] Besser, P.R., Marieb, Th. N. Bravman, J.C., MRS Proc. Vol. 309, 181 and 287 (1993)Google Scholar
[10] Beckers, D. et. al., to be publishedGoogle Scholar