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Thermal xidation of silicon in dry oxygen: - the role of crystallographic orientation -

Published online by Cambridge University Press:  22 February 2011

K. Taniguchi ,
C. Hamaguchi ,
K. Kobayashit  and
M. Hirayamat
K. Taniguchi
Affiliation:
Osaka University, Faculty of Engineering, Suita, Osaka 565 Japan
C. Hamaguchi
Affiliation:
Osaka University, Faculty of Engineering, Suita, Osaka 565 Japan
K. Kobayashit
Affiliation:
Mitsubishi Electric Co., LSI Lab., Itami, Hyogo, 664 Japan
M. Hirayamat
Affiliation:
Mitsubishi Electric Co., LSI Lab., Itami, Hyogo, 664 Japan
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Abstract

Based upon the linear-parabolic growth model of silicon oxidation, accurate kinetic rate constants are determined for various crystallographic orientation wafers in the 900 −1100°C range. The parabolic rate constant is independent of substrate orientation above 1000 °C, while, at 900°C, it depends on the orientation of the underlying substrate. The behavior of the parabolic rate constant at low temperature can be explained by accounting for Si-O bond-breaking due to stress during the oxide growth. The linear rate constant is observed to depend on the crystallographic orientation of the silicon surface in all temperature range. The orientation dependence of the linear rate constant is explained by both strain relaxation of the oxide film and areal atomic density of silicon at the silicon/oxide interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 139
Copyright
Copyright © Materials Research Society 1988

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References

1. Han, C.J. and Helms, C.R., J. Electrochem. Soc., 134, 504 (1987).CrossRefGoogle Scholar
2. Massoud, H.Z., Plummer, J.D. and Irene, E.A., J. Electrochem. Soc., 132, 1745 (1985).CrossRefGoogle Scholar
3. Kao, D., McVittie, J.P., Nix, W.D. and Saraswat, K.C., IEEE Trans. Electron Devices, ED-34, 1008 (1987).Google Scholar
4. Irene, E.A., Phil. Mag. B, 55, 131 (1987).CrossRefGoogle Scholar
5. Brantley, W.A., J. Appl. Phys., 44, 534 (1973).CrossRefGoogle Scholar
6. Nikanorov, S.P., Sov. Phys. Solid State 13, 2516 (1972).Google Scholar
7. Kobeda, E. and Irene, E.A., J. Vac. Sci. Technol. B, 4, 720 (1986).CrossRefGoogle Scholar
8. Taft, E.A., J. Electrochem. Soc., 125, 968 (1978).CrossRefGoogle Scholar