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Thermally stimulated current spectroscopy of carbon-doped GaN grown by molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

Z-Q. Fang ,
D. C. Look ,
R. Armitage ,
Q. Yang  and
E. R. Weber
Z-Q. Fang
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, OH 45435
D. C. Look
Affiliation:
Semiconductor Research Center, Wright State University, Dayton, OH 45435
R. Armitage
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Q. Yang
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California, and Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Deep traps in semi-insulating (SI) or high-resistivity C-doped GaN grown by metal-organic chemical-phase deposition or molecular-beam epitaxy have been studied by thermally stimulated current (TSC) spectroscopy. Incorporation of carbon in GaN introduces CN acceptors, resulting in compensation and formation of SI-GaN; however, as [C] increases in the GaN samples, both resistivity and activation energy of the dark current decrease. In the GaN samples with low [C], we find at least six TSC traps: B (0.61 eV), Bx (0.50 eV), C1 (0.44 eV), C (0.32 eV), D (0.23 eV), and E (0.16 eV), all of which are very similar to electron traps typically found in n-type GaN by deep level transient spectroscopy (DLTS). However, in the GaN sample with the highest [C], both traps E and B are suppressed, and instead, trap Bx appears. Based on DLTS studies of electron-irradiated and plasma-etched GaN samples, we believe that traps E, D and C are related to VN, and that trap B is probably related to VGa, in the form of complexes such as VGa-ON. As [C] increases, CGa donors become more favorable, and the transition of trap B to trap Bx may suggest that CGa related complexes are forming. In comparison with lightly C-doped GaN, heavily C-doped GaN sample exhibits very strong PPC at 83 K. We show that the PPC in both cases can be simply explained by the thermal emission of carriers from shallower traps.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y5.27
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Tang, H., Webb, J.B., Bardwell, J.A., Raymond, S., Salzman, J., and Uzan-Saguy, C., Appl. Phys. Lett. 78, 757 (2001).Google Scholar
2. Boguslawski, P., Briggs, E.L., and Bernholc, J., Appl. Phys. Lett. 69, 233 (1996).Google Scholar
3. Seager, C.H., Wright, A.F., Yu, J., and Götz, W., J. Appl. Phys. 92, 6553 (2002).Google Scholar
4. Armitage, R., Yang, Q., Feick, H., Tzeng, S.Y., Lim, J., and Weber, E.R., Mat. Res. Soc. Symp. Proc. 743, L10.7.1 (2003).Google Scholar
5. Armitage, R., Yang, Q, Feick, H., Park, Y., and Weber, E.R., Mat. Res. Soc. Symp. Proc. 719, F1.2 (2002)Google Scholar
6. Salzman, J., Uzan-Saguy, C., Kalish, R., Richter, V., and Meyler, B., Appl. Phys. Lett. 76, 1431 (2000).Google Scholar
7. Fang, Z-Q., Claflin, B.B., Look, D.C., Myers, T.H., Koleske, D.D., Wickenden, A.E., and Henry, R.L., Mat. Res. Soc. Symp. Proc. 743, 749 (2002).Google Scholar
8. Look, D.C., Semiconductors and Semimetals 19, 75 (1983).Google Scholar
9. Fang, Z-Q., Polenta, L., Hemsky, J.W., and Look, D.C., 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra, edited by Jagadish, C. and Welham, N.J. (IEEE, Piscataway, NJ, 2000), p. 35.Google Scholar
10. Fang, Z-Q., Hemsky, J.W., Look, D.C., and Mark, M.P., Appl. Phys. Lett. 72, 448 (1998).Google Scholar
11. Fang, Z-Q., Look, D.C., Wang, X-L., Han, Jung, Khan, F.A., and Adesida, I., Appl. Phys. Lett. 82, 1562 (2003).Google Scholar
12. Look, D.C., Fang, Z-Q., Hemsky, J.W., and Kengkan, P., Phys. Rev. B 55, 2214 (1997).Google Scholar
13. Van de Walle, C.G., Neugebauer, J., and Stampfl, C., Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, Edited by Edgar, J.H. et al. (INSPEC, IEE, London, UK, 1999) p. 281.Google Scholar
14. Fang, Z-Q., Look, D.C., and Polenta, L., J. Phys.: Condens. Matter 14, 13061 (2002).Google Scholar
15. Look, D.C., Phys. Stat. Sol. (b) 228, 293 (2001).Google Scholar
16. Oila, J., Kivioja, J., Ranki, V., Saarinen, K., Look, D.C., Molnar, R.J., and park, S.S., Appl. Phys. Lett. 82, 4611 (2003).Google Scholar
17. Armitage, R., Hong, W., Yang, Q., Feick, H., Gebauer, J., Weber, E.R., Hautakangas, S., and Saarinen, K., Appl. Phys. Lett. 82, 3457 (2003).Google Scholar
18. Lin, J.Y., Dissanayake, A., Brown, G., Jiang, H.X., Phys. Rev. B 42, 5855 (1990).Google Scholar
19. Reddy, C.V, Balakrishnan, K., Okumura, H., and Yoshida, S., Appl. Phys. Lett. 73, 244 (1998).Google Scholar
20. Hirsch, M.T., Wolk, J.A., Walukiewicz, W., and Haller, E.E., Appl. Phys. Lett. 71, 1098 (1997).Google Scholar