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Thermoelectric Power Devices Based on InN Thin Films

Published online by Cambridge University Press:  26 February 2011

Takayuki Matsumoto ,
Shigeo Yamaguchi  and
Atsushi Yamamoto
Takayuki Matsumoto
Affiliation:
r200570100@kanagawa-u.ac.jp, Kanagawa University, Engineering, 3-27-1 Rokkakubashi Kanagawa-ku Yokohama, Yokohama, 221-8686, Japan
Shigeo Yamaguchi
Affiliation:
yamags18@kanagawa-u.ac.jp, Kanagawa University, Yokohama, 221-8686, Japan
Atsushi Yamamoto
Affiliation:
yamags18@kanagawa-u.ac.jp, AIST, Tsukuba, 305-8568, Japan
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Abstract

We have studied the temperature dependence of thermoelectric properties of amorphous InN thin films prepared by reactive radio-frequency sputtering. We fabricated 60-pair and 120-pair InN-chromel films, which were deposited on polyimide films. For the 120-pair device, the maximum open output voltage and the maximum output power were 210 mV and 65 nW, respectively, at temperature difference of 168 K.

Keywords

thermoelectricitynitridesputtering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 973: Symposium BB – Mobile Energy , 2006 , 0973-BB04-09
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

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