Hostname: page-component-669899f699-chc8l Total loading time: 0 Render date: 2025-04-28T04:10:55.653Z Has data issue: false hasContentIssue false
  • English
  • Français

Thick Film Metallization of Aluminum Nitride

Published online by Cambridge University Press:  21 February 2011

M. Grant Norton  and
Brian C. H. Steele
M. Grant Norton
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2BP, England.
Brian C. H. Steele
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2BP, England.
Get access

Abstract

A widely used technique to metallize substrates for electronic packaging applications is thick film technology. The interaction between commercial thick film materials and aluminum nitride (AlN) has been undertaken and an in depth investigation of the glass/ceramic reactions which occur in frit bonded films. The experimental results have been correlated with thermodynamic predictions of the reaction processes. The standard glasses were found to react with the substrate causing blistering, foaming or dewetting. Following from these studies a model glass system was developed and reactions of this glass with AlN have been investigated using scanning electron microscopical techniques and hot stage microscopy. Thick film inks have been developed using this glass system which are compatible with AlN substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 83
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Hitch, T. T., J. Electron. Mater. 3, 553. (1974)Google Scholar
2. Vest, R. W., Amer. Ceram. Soc. Bull 65, 631 (1986)Google Scholar
3. Becher, P. F. and Newell, W. L., J. Mater. Sci. 12, 90 (1977)Google Scholar
4. Iwase, N., Anzai, K., Shinozaki, K., Hirao, O., Dinh-Thanh, T. and Sugiura, Y., Trans., Components, Hybrids and Manuf. Technol. CHMT8, 253 (1985)Google Scholar
5. Mohamed, A. A. and Corbett, S., Proc. Intl. Symp. Microelectronics, 218 (1985)Google Scholar
6. Werdecker, W., Proc. 5th. European Hybrid Microelectronics Conf. 472 (1985)Google Scholar
7. Norton, M. G., Steele, B. C. H. and Leach, C. A., Science of Ceramics, 14, 545 (1987)Google Scholar
8. Norton, M. G., Steele, B. C. H. and Leach, C. A., Brit. Ceram. Soc. Proc. 41, 69 (1989)Google Scholar
9. Norton, M. G., Ph.D. Thesis, University of London (1989)Google Scholar
10. Norton, M. G., Hybrid Circuits, 20, 18 (1989)Google Scholar
11. Norton, M. G., J. Mater. Sci. Lett. (accepted for publication).Google Scholar
12. Hitch, T. T., ASTM STP640, American Society for Testing and Materials 211 (1978)Google Scholar
13. Norton, M. G., J. Mater. Sci. (submitted for publication).Google Scholar
14. Pask, J. A., Amer. Ceram. Soc. Bull. 66, 1587 (1987)Google Scholar