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Thick Film Metallization of Aluminum Nitride

Published online by Cambridge University Press:  21 February 2011

M. Grant Norton  and
Brian C. H. Steele
M. Grant Norton
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2BP, England.
Brian C. H. Steele
Affiliation:
Department of Materials, Imperial College of Science, Technology and Medicine, London SW7 2BP, England.
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Abstract

A widely used technique to metallize substrates for electronic packaging applications is thick film technology. The interaction between commercial thick film materials and aluminum nitride (AlN) has been undertaken and an in depth investigation of the glass/ceramic reactions which occur in frit bonded films. The experimental results have been correlated with thermodynamic predictions of the reaction processes. The standard glasses were found to react with the substrate causing blistering, foaming or dewetting. Following from these studies a model glass system was developed and reactions of this glass with AlN have been investigated using scanning electron microscopical techniques and hot stage microscopy. Thick film inks have been developed using this glass system which are compatible with AlN substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 167: Symposium K – Advanced Electronic Packaging Materials , 1989 , 83
Copyright
Copyright © Materials Research Society 1990

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