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Thin Film Dielectrics for Electronics Using Combustion Chemical Vapor Deposition

Published online by Cambridge University Press:  10 February 2011

Wen-yi Lin
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
Hai Huang
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
D. Kacy Cullen
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
Shara S. Shoup
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
Donald Cousins
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
Jerome J. Schmitt
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
Andrew T. Hunt
Affiliation:
MicroCoating Technologies, Chamblee, GA 30341, wlin@ccvd.com.
Robert R. Romanofsky
Affiliation:
Lewis Research Center, NASA, Cleveland, OH 44135.
Fred W. VanKeuls
Affiliation:
Lewis Research Center, NASA, Cleveland, OH 44135.
Félix A. Miranda
Affiliation:
Lewis Research Center, NASA, Cleveland, OH 44135.
Carl H. Mueller
Affiliation:
Lewis Research Center, NASA, Cleveland, OH 44135.
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Abstract

This paper reviewed work to date on multicomponent oxides deposited, utilizing openatmosphere Combustion Chemical Vapor Deposition for electronic applications. Epitaxial barium strontium titanate and strontium titanate thin films were deposited on (100) MgO single crystal substrates. They were patterned to form interdigitated structures for electrically tunable devices, namely, coupled microstripline phase shifters (CMPS). The undoped, as-deposited perovskite dielectrics exhibited a figure of merit of 53°/dB at 20 GHz and 23°C, indicating high degree of tunability and fairly low loss. High-permittivity (ε=263), polycrystalline BST and SrTiO3 were studied for dynamic random access memory, and leakage current density of 10−7 A/cm2 was measured. Intended for non-volatile ferroelectric memory, lead zirconium titanate was deposited onto a seed layer of perovskite structure to prevent the growth of the unwanted pyrochlore phase. To function as buffer layers for superconductor applications, epitaxial CeO2, YSZ, SrTiO3, LaAlO3, Y2O3, and Yb2O3 coatings on single crystal and textured nickel substrate were investigated. Electronic analyses and characterization, using SEM, EDS, XRD, and X-ray pole figures, were presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Lin, W.-Y., Huang, H., Schmitt, J.J., Hunt, A.T, Romanofsky, R.R., Van Keuls, F.W., and Miranda, F.A., presented at the 31st International Symposium on Microelectronics, International Microelectronics and Packaging Society and American Chemical Society, San Diego, CA, 1998.Google Scholar
2. Lin, W.-Y., Huang, H., Schmitt, J.J., Hunt, A.T., presented at the FAME Workshop, Washington, D.C., 1998.Google Scholar
3. Melnick, B.M., Gregory, J., and Araujo, C.A. Paz de, Integrated Ferroelectrics, 11, 145 (1995).10.1080/10584589508013587Google Scholar
4. de Keijser, M. and Dormans, G.J.M., Mater. Res. Soc. Bull. 21, 37 (1996).10.1557/S0883769400046066Google Scholar
5. Hunt, A. T., Carter, W. B., Cochran, J. K., Jr., Appl. Phys. Lett. 63, 266 (1993).10.1063/1.110362Google Scholar
6. Hunt, A. T., Cochran, J. K., Jr., Carter, W. B., US Patent Number 5, 652,021 (1997).Google Scholar
7. Hunt, A.T., Abbey, J., and H.G. Hömis, presented at the International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, 1995.Google Scholar
8. Shoup, Shara S., Shanmugham, Subu, Cousins, Donald, Hunt, Andrew T., Paranthaman, M., Goyal, Amit, Martin, Patrick, and Kroeger, Donald M., in press in IEEE Transactions on Applied Superconductivity, 1998.Google Scholar