In advanced ULSI devices, Ti (titanium)/TiN (titanium nitride) film stack is commonly used as liner materials. Ti is used to reduce contact/via resistance while TiN is utilized as an adhesion/diffusion barrier layer. Ti/TiN liner with optimized thickness combinations should be used for progressively advanced ULSI devices with features of reduced dimensions and increased aspect ratios in order to effectively reduce contact/via resistance, ensure barrier quality, and maximize cross section of metal conductors with low electrical resistivities. This study evaluates the film properties such as sheet resistance, density, stress, grain structures, and reflectance of individual Ti and TiN, and composite Ti/TiN films manufactured by collimated physical vapor deposition (PVD). The film thickness ranges from 5 to 60nm. The dependence of these properties on the film thickness will be discussed.