Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-20T15:19:03.965Z Has data issue: false hasContentIssue false

A Three-phase Model for the Structure of Porous Thin Films Determined by X-ray Reflectivity and Small-Angle Neutron Scattering

Published online by Cambridge University Press:  17 March 2011

Wen-li Wu
Affiliation:
Polymers Division, Materials Science and Engineering Laboratory National Institute of Standards and Technology 100 Bureau Drive, Stop 8541, Gaithersburg, MD 20899-8541, USA
Eric K. Lin
Affiliation:
Polymers Division, Materials Science and Engineering Laboratory National Institute of Standards and Technology 100 Bureau Drive, Stop 8541, Gaithersburg, MD 20899-8541, USA
Changming Jin
Affiliation:
SEMATECH 2706 Montopolis Drive, Austin, TX 78741-6499, USA
Jeffrey T. Wetzel
Affiliation:
SEMATECH 2706 Montopolis Drive, Austin, TX 78741-6499, USA
Get access

Abstract

A methodology to characterize nanoporous thin films based on a novel combination of high-resolution specular x-ray reflectivity and small-angle neutron scattering has been advanced to accommodate heterogeneities within the material surrounding nanoscale voids. More specifically, the average pore size, pore connectivity, film thickness, wall or matrix density, coefficient of thermal expansion, and moisture uptake of nanoporous thin films with non-homogeneous solid matrices can be measured. The measurements can be performed directly on films up to 1.5 µm thick while supported on silicon substrates. This method has been successfully applied to a wide range of industrially developed materials for use as low-k interlayer dielectrics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Hrubesh, L. W., Keene, L. E., and Latorre, V. R., J. Mater. Res. 8, 1736 (1993).10.1557/JMR.1993.1736Google Scholar
2. Grasserbauer, M. and Werner, H. W., Analysis of microelectronic materials and devices (Wiley, New York, 1991).Google Scholar
3. Gidley, D. W., Frieze, W. E., Dull, T. L., Yee, A. F., Nguyen, C. V. and Yoon, D. Y., Appl. Phys. Lett., 76 (10), 1282 (2000).10.1063/1.126009Google Scholar
4. Dultsev, F. N. and Baklanov, M. H., Elec. Solid State Lett., 2, 192 (1999).10.1149/1.1390780Google Scholar
5. Wu, W. L., Wallace, W. E., Lin, E. K., Lynn, G. W., Glinka, C. J., Ryan, E. T. and Ho, H. M., J. Appl. Phys., 87, 1193 (2000).10.1063/1.371997Google Scholar
6. Lekner, J., Theory of Reflection (Nijhoff, Dordrecht, 1987).Google Scholar
7. Dietrich, S. and Haase, A., Phys. Rep. 260, 1 (1995).10.1016/0370-1573(95)00006-3Google Scholar
8. Chason, E. and Mayer, T. M., Crit. Rev. Solid State Mat. Sci. 22, 1 (1997).10.1080/10408439708241258Google Scholar
9. Higgins, J. S. and Benoit, H. C., Polymers and Neutron Scattering (Oxford University Press, Oxford, 1994).Google Scholar
10. Wu, W. L., Polymer, 23, 1907 (1982).10.1016/0032-3861(82)90216-6Google Scholar
11. Debye, P., Anderson, H. R., and Brumberger, H., J. Appl. Phys. 28, 679 (1957).10.1063/1.1722830Google Scholar