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THz Emission from InN

Published online by Cambridge University Press:  31 January 2011

Hyeyoung Ahn ,
Yi-Jou Yeh ,
Yu-Liang Hong  and
Shangjr Gwo
Hyeyoung Ahn
Affiliation:
hyahn@mail.nctu.edu.tw, National Chiao Tung University, Department of Photonics, Hsinchu, Taiwan, Province of China
Yi-Jou Yeh
Affiliation:
eviayeh@am94.nctu.edu.tw, National Chiao Tung University, Department of Photonics, Hsinchu, Taiwan, Province of China
Yu-Liang Hong
Affiliation:
d9622806@oz.nthu.edu.tw, National Tsing Hua University, Department of Physics, Hsinchu, Taiwan, Province of China
Shangjr Gwo
Affiliation:
shangjr.gwo@scholarone.com, National Tsing Hua University, Department of Physics, Hsinchu, Taiwan, Province of China
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Abstract

We report the terahertz (THz) emission from the wurzite indium nitride (InN) films grown by molecular beam epitaxy (MBE). More than two orders of magnitude of THz power enhancement has been achieved from the InN film grown along the a-axis and magnesium (Mg) doped InN with a critical carrier concentration. The primary radiation mechanism of the a-plane InN film is found to be due to the acceleration of photoexcited carriers under the polarization-induced in-plane electric field perpendicular to the a-axis. Apparent azimuthal angle dependences of THz wave amplitude and the second harmonic generation are observed from a-plane InN. In the Mg-doped films, Mg as the acceptors compensate the native donors in the InN films and large band bending over a wider space-charge region causes the enhancement of THz emission power compared to the undoped InN.

Keywords

III-VHall effectMg
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1202: Symposium I – III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions , 2009 , 1202-I11-02
Copyright
Copyright © Materials Research Society 2010

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