Hostname: page-component-78c5997874-fbnjt Total loading time: 0 Render date: 2024-11-19T14:07:13.157Z Has data issue: false hasContentIssue false
  • English
  • Français

TiSi2 Formation on Submicron Polysilicon Lines: Role of Line Width and Dopant Concentration

Published online by Cambridge University Press:  21 February 2011

E. Ganin ,
S. Wind ,
P. Ronsheim ,
A. Yapsir ,
K. Barmak ,
J. Bucchignano  and
R. Assenza
E. Ganin
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
S. Wind
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
P. Ronsheim
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
A. Yapsir
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
K. Barmak
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
J. Bucchignano
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
R. Assenza
Affiliation:
IBM Technology Products, East Fishkill IBM Research Division, Yorktown Heights
Get access

Abstract

We report on a study of the effects of dopant concentration and linewidth on the formation of TiSi2 on polysilicon. The transformation from the C49 phase to the C54 phase is inhibited by a high concentration of either phosphorus or arsenic in blanket polysilicon films. For sub-half-micron lines, patterned in polysilicon doped with As or P, agglomeration is the key factor in the inability to produce low resistance silicide. The result is a critically shrinking process window for the attainment of low resistance VLSI interconnects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 109
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lasky, J.B., Nakos, J.S., Cain, O.J., and Geiss, P.J. IEEE Trans.on Electron Devices, Vol. 38, No.2, p.262, 1991 Google Scholar
2. Norstrom, H., Maex, K., and Vandenabeele, P. J. Vac. Sci. Technol. B 8(6), p.1223, 1990 Google Scholar
3. Park, H.K., Sachitano, J., McPherson, M., Yamaguchi, T., and Lehman, G. J. Vac. Sci. Technol. A, 2(2), p.264, 1984 Google Scholar
4. Beyers, R., Coulman, D., and Merchant, P. J. Appl. Phys. Vol.61 (11), p.5110, 1987 Google Scholar
5. Matsui, H., Ohtsuki, H., Ino, M., and Ushio, S. in “Thin films - Interfaces and Phenomena”, ed. Nemanich, R.T., Ho, P.S., Lau, S.S., Mat.Res.Soc.Symp.Proc. Vol.54, p.769, 1986 Google Scholar
6. Properties of Silicon, p.975 INSPEC, 1988 Google Scholar
7. Chou, T.C., Wong, C.Y. and Tu, K.N. IBM T.J. Watson Research Center Report, RC 12173, 1986 Google Scholar