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Titanium Nitride Thin Films: Properties and Apcvd Synthesis Using Organometallic Precursors

Published online by Cambridge University Press:  21 February 2011

Renaud M. Fix ,
Roy G. Gordon  and
David M. Hoffman
Renaud M. Fix
Affiliation:
Harvard University, Department of Chemistry, 12 Oxford Street, Cambridge, MA 02138
Roy G. Gordon
Affiliation:
Harvard University, Department of Chemistry, 12 Oxford Street, Cambridge, MA 02138
David M. Hoffman
Affiliation:
Harvard University, Department of Chemistry, 12 Oxford Street, Cambridge, MA 02138
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Abstract

A novel process for the low temperature synthesis of titanium nitride thin films by APCVD is described. TiN coatings containing less than one atom percent of carbon and oxygen were deposited at 200 °C on silicon, vitreous carbon, glass, stainless steel and plastic substrates using Ti(Nme2)4 and ammonia gas as precursors. The films were characterized by Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 168 , 1989 , 357
Copyright
Copyright © Materials Research Society 1990

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