Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-23T16:12:19.081Z Has data issue: false hasContentIssue false
  • English
  • Français

Topographical and chemical surface modification of porous MSQ using silylating agents with different numbers of methoxy groups

Published online by Cambridge University Press:  01 February 2011

Casey Smith ,
Dennis Mueller ,
Phil Matz  and
Rick Reidy
Casey Smith
Affiliation:
ces0102@unt.edu, University of North Texas, Materials Science, 3940 N Elm St. STE E132, Denton, TX, 76207, United States
Dennis Mueller
Affiliation:
mueller@unt.edu, University of North Texas, Physics, Denton, 76207, United States
Phil Matz
Affiliation:
p-matz@ti.com, Texas Instruments, Silicon Technology Development, Dallas, 75234, United States
Rick Reidy
Affiliation:
reidy@unt.edu, University of North Texas, Materials Science, 3940 N. Elm St., Denton, TX, 76207, United States
Get access

Abstract

Plasma ash processes that cause surface damage in porous interlayer dielectric materials (ILDs) result in increased water absorption, permittivity, and metal intrusion. In this study, we employ mono-, di-, and tri-functional alkoxide silylation agents in supercritical CO2 to repair O2 ash damaged low-k methylsilsesquioxane (MSQ) films. Fourier transform infrared spectroscopy (FTIR) was performed using normal incidence transmission and attenuated total reflection (ATR) techniques to highlight differences in silylation efficiency based on agent functionality. Contact angle measurements reveal a significant change in hydrophobicity after functionalization of the O2 ashed samples with multifunctional agents. Atomic force microscopy (AFM) was utilized to determine changes in surface topography after ashing and repair.

Keywords

surface chemistrydielectricfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F04-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] International Technology Roadmap for Semiconductors 2005, http://www.itrs.net/Common/2005ITRS/Interconnect2005.pdfGoogle Scholar
[2] Maex, K., Baklanov, M. R., Shamiryan, D., Iacopi, F., Brongersma, S. H., Yanvitskaya, Z. S., Journal of Applied Physics, 93:11, 8793 (2003)Google Scholar
[3] Matz, P.D. and Reidy, R. F., Solid State Phenomena, 103–104, 315 (2005)Google Scholar
[4] Gorman, B.P., Orozco-Teran, R. A., Zhang, Z., Matz, P. D., Mueller, D. W., Reidy, R. F., J. Vac. Sci. Technol., B22(3), 1210 (2004)Google Scholar
[5] Capani, P. M., Gorman, B. P., Reidy, R. F., Mueller, D. W., Walter, E. R., Matz, P. D., Rhoad, J. T., Busch, E. L., Advanced Metallization Conference Proceedings, XX, 509 (2005)Google Scholar
[6] Weibel, G. L. and Ober, C. K., Microelectronic Engineering, 65, 145 (2003)Google Scholar
[7] Suratwala, T. I., Hanna, M. L., Miller, E. L., Whittman, P. K., Thomas, I. M., Ehrmann, E. R., Maxwell, R. S., Burnham, A. K., J. Noncrys Sol., 316, 349–363 (2003)Google Scholar
[8] Gun'ko, V. M., Vedamuthu, M. S., Henderson, G. L., Blitz, J. P., J. Coll. Inter. Sci., 228, 157 (2000)Google Scholar
[9] Nitta, S.V., Purushothaman, S., Chakrapani, N., Rodriguez, O., Klymko, N., Ryan, E. Todd, Bonilla, G., Cohen, S., Molis, S., McCullough, K., Advanced Metallization Conference Proceedings, XXI, 325 (2006)Google Scholar
[10] Xie, B. and Muscat, A., Microelectronic Engineering, 76, 52 (2004)Google Scholar
[11] Xie, B. and Muscat, A., Microelectronic Engineering, 80, 349 (2005)Google Scholar
[12] Goh, T.K., Wong, T.K.S., Microelectronic Engineering 75 330 (2004)Google Scholar
[13] Scharf, T., Tribology Class Lecture Notes (2006), unpublishedGoogle Scholar
[14] Orozco-Teran, R. A., Functionalization and characterization of porous low-κ dielectrics, Dissertation, University of North Texas (2005)Google Scholar
[15] Wang, Y.H., Kumar, R., Zhou, X., Pan, J.S., Chai, J.W., Thin Solid Films 473 132–136 (2005)Google Scholar
[16] Cheng, Y., Kan, J., Lin, I., Thin Solid Films, 462–463 297–301 (2004)Google Scholar
[17] Yang, P., Lu, D., Murthy, B. R., Moser, H. O., Surface and Coatings Technology, 198, 133–137 (2005)Google Scholar
[18] Gondran, C. F. H., Michelson, D. K., J. Vac. Sci. Technol., In Press 2006 Google Scholar
[19] Kondoh, E., Asano, T., Arao, H., Nakashima, A., and Komatu, M., Jap. J. App. Phys, 39 3919–3923 (2002)Google Scholar