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Transmission Electron Microscope Study of An Ordered Structure in GaAs0.5 Sb0.5 Grown By Molecular Beam Epitaxy

Published online by Cambridge University Press:  26 February 2011

Y. E. Ihm ,
N. Otsuka ,
Y. Hirotsu ,
J. Klem  and
H. Morkoc
Y. E. Ihm
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47906
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47906
Y. Hirotsu
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47906
J. Klem
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana, 1101 W.Springfield Avenue, Urbana, IL 61809
H. Morkoc
Affiliation:
Coordinated Science Laboratory, University of Illinois at Urbana, 1101 W.Springfield Avenue, Urbana, IL 61809
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Abstract

The ordered structure in a (100) GaAs0.5 Sb0.5 epilayer grown by molecular beam epitaxy has been studied by transmission electron microscopy. Domain structures are observed in dark field images of superstructure reflections. The ordered structure is derived by the analysis of diffraction patterns taken from single domains. The ordered structure is described as an alternate stacking of As and Sb planes in the <111> direction of the FCC sublattice. The alternate stacking of As and Sb plane is directly observed by high resolution electron microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 589
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1]Kuan, T.S., Fuech, T.F., Wang, W.I. and Wilkie, E.L., Phys. Rev. Lett., 54, 201 (1985)Google Scholar
[2]Nakayama, H. and Fujta, H., in GaAs and Related Compounds 1985, Inst. Phys. Conf. Ser., (Hilger, London, 1986), 79, p.289Google Scholar
[3]Jen, H.R., Cherng, M.J. and Stringfellow, G.B., Appl. Phys. Lett., 48, 1603 (1986)Google Scholar
[4]Murgatroyd, I.J., Norman, A.G. and Booker, G.R., Mater. Res. Soc. Spring Meeting, Apr.15–18 (1986), Palo Alto, Calif.Google Scholar
[5]Gomyo, A., Suzuki, T., Kobayashi, K., Kawata, S., Hino, I. and Yuasa, T., Appl. Phys. Lett., 50, 673 (1987)Google Scholar
[6]Klem, J., Huang, D., Morkoc, H., Ihm, Y.E. and Otsuka, N., Appl. Phys. Lett., 50, 1364 (1987)Google Scholar
[7]Shahid, M.A., Mahajan, S., Laughlin, D.E. and Cox, H.M., Phys. Rev. Lett., 58, 2567(1987)Google Scholar
[8]Kuan, T.S., Wang, W.I. and Wilkie, E.L., Appl. Phys. Lett., 51, 51 (1987)Google Scholar
[9]Ihm, Y.E., Otsuka, N., Klem, J. and Morkoc, H., Appl. Phys. Lett., 51, 2013 (1987)Google Scholar