Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-29T09:22:24.136Z Has data issue: false hasContentIssue false
  • English
  • Français

Two-Dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-Heterostructure Field Effect Transistors

Published online by Cambridge University Press:  03 September 2012

Narihiko Maeda ,
Tadashi Saitoh ,
Kotaro Tsubaki ,
Toshio Nishida  and
Naoki Kobayashi
Narihiko Maeda
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Tadashi Saitoh
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Kotaro Tsubaki
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Toshio Nishida
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories, Physical Science Laboratory, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa, 243-0198, Japan
Get access

Extract

Two-dimensional electron gas transport properties have been investigated in nitride double-heterostructures. A striking effect has been observed that the two-dimensional electron gas mobility has been drastically enhanced in the AlGaN/GaN/AlGaN doubleheterostructure, compared with that in the conventional AlGaN/GaN singleheterostructure. The observed mobility enhancement has been shown to be mainly due to the enhanced polarization-induced electron confinement in the double-heterostructure, and additionally due to the improvement of the interface roughness in the structure. Device operation of an AlGaN/GaN/AlGaN double-heterostructure field effect transistor has been demonstrated: a maximum transconductance of 180 mS/mm has been obtained for a 0.4 mm-gate-length device. In the double-heterostructure using InGaN channel, the increased capacity for the two-dimensional electron gas has been observed. The AlGaN/(In)GaN/AlGaN double-heterostructures are effective for improving the electron transport properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W4.7
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Khan, M.A., Chen, Q., Shur, M.S., Mcdermott, B.T., and Higgins, J.A., IEEE Electron Device Lett. 17, 325 (1996).Google Scholar
2. Wu, Y.F., Keller, B.P., Keller, S., Kapolnek, D., Kozodoy, P., Denbaars, S.P., and Mishra, U. K., Appl. Phys. Lett. 69, 1438 (1996).Google Scholar
3. Aktas, O., Fan, Z.F., Mohammad, S. N., Botchkarev, A., and Morkoc, H., Appl. Phys. Lett. 69, 3872 (1996).Google Scholar
4. Binari, S.C., Redwing, J.M., Kelner, G., and Kruppa, W., Electron. Lett. 33, 242 (1997).Google Scholar
5. Chen, Q., Yang, J.W., Gaska, R., Khan, M.A., Shur, M.S., Sullivan, G.J., Sailor, A.L., Higgings, J.A., Ping, A.T., and Adesida, I., IEEE Electron Device Lett. 19, 44 (1998).Google Scholar
6. Wu, Y.F., Keller, B.P., Fini, P., Keller, S., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., and Mishra, U.K., IEEE Electron Device Lett. 19, 50 (1998).Google Scholar
7. Ping, A.T., Chen, Q., Yang, J.W., Khan, M.A., and Adesida, I., IEEE Electron Device Lett. 19, 54 (1998).Google Scholar
8. Bykhovski, A., Gelmont, B., and Shur, M., J. Appl. Phys. 74, 6734 (1993).Google Scholar
9. Bykhovski, A.D., Gelmont, B.L., and Shur, M.S., J. Appl. Phys. 78, 3691 (1995).Google Scholar
10. Bykhovski, A.D., Gelmont, B.L., and Shur, M.S., J. Appl. Phys. 81, 6332 (1997).Google Scholar
11. Bernardini, F. and Fiorentini, V., Phys. Rev. B56, 10024 (1997).Google Scholar
12. Gaska, R., Yang, J. W., Bykhovski, A.D., Shur, M.S., Kaminskii, V.V., and Soloviov, S., Appl. Pys. Lett. 71, 3817 (1997).Google Scholar
13. Gaska, R., Yang, J.W., Bykhovski, A.D., Shur, M.S., Kaminskii, V.V., and Soloviov, S., Appl. Pys. Lett. 72, 64 (1998).Google Scholar
14. Asbeck, P.M., Yu, E.T., Lau, S.S., Sullivan, G.J., J. Van Hove, and Redwing, J., Electron. Lett. 33, 1230 (1997).Google Scholar
15. Yu, E.T., Sullivan, G.J., Asbeck, P.M., Wang, C.D., Qiao, D., and Lau, S.S., Appl. Phys. Lett. 71, 2794 (1997).Google Scholar
16. Maeda, N., Nishida, T., Kobayashi, N., and Tomizawa, M., Appl. Phys. Lett. 73, 1856 (1998).Google Scholar
17. Saitoh, T., Gotoh, H., Sogawa, T., and Kanbe, H., Mat. Res. Symp. Proc. 442, 63 (1997).Google Scholar