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Ultra-low Contact Resistivity by High Concentration Germanium and Boron Ion Implantation Combined with Low Temperature Annealing

Published online by Cambridge University Press:  15 February 2011

A. Murakoshi ,
M. Iwase ,
M. Koike ,
H. Niiyama  and
K. Suguro
A. Murakoshi
Affiliation:
TOSHIBA Corporation 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan+81-44-549;2193, +81-44-549-2248
M. Iwase
Affiliation:
TOSHIBA Corporation 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan+81-44-549;2193, +81-44-549-2248
M. Koike
Affiliation:
Microelectronics Engineering Laboratory, Environmental Engineering Laboratory
H. Niiyama
Affiliation:
TOSHIBA Corporation 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan+81-44-549;2193, +81-44-549-2248
K. Suguro
Affiliation:
TOSHIBA Corporation 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 210, Japan+81-44-549;2193, +81-44-549-2248
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Abstract

A new formation method for an ultra-low resistivity contact and structural analysis are discussed. In this study, a minimum contact resistivity of 6.9× 10−9 Ω·cm2 has been successfully obtained in an AlSi(lwt%)Cu(0.5wt%) alloy / Si system by using heavy dose ion implantations of Ge and B combined with low temperature annealing as low as 550°C. Structural analysis on the Si surface layer has been carried out. As a result, it was found that the crystal lattice was expanded in-plane by 6% in the Si layer near the surface because of the high concentration of Ge and no relaxation of lattice strain at such a low temperature. It was also found that super-saturation of B was stably formed in this system. An ultra-low resistivity contact is considered to be a result of these combined effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 153
Copyright
Copyright © Materials Research Society 1996

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