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Ultra-Thin p+ Layers in GaAs

Published online by Cambridge University Press:  28 February 2011

K. T. Short ,
U. K. Chakrabarti  and
S. J. Pearton
K. T. Short
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
U. K. Chakrabarti
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

The formation of shallow (0.05–0.2 μm) p+ layers in GaAs by pulse diffusion of Zn from a doped oxide source, thermal diffusion of Cd by vapor transport, or by low energy implantation of Cd, Mg, Be, Zn or Hg ions was investigated by electrochemical capacitance-voltage profiling, Secondary Ion Mass Spectrometry, Rutherford backscattering and Hall measurements. Hole densities in excess of 1019 cm−3 are obtainable by either Zn diffusion or acceptor implantation, though the high temperature cycle must be kept to ≤3 sec at (≤1000°C to prevent excessive redistribution of the acceptor dopants. Pulse diffusion at temperature °C leads to shallow regions with atomic concentrations above 1019 cm−3, but electrically active concentrations orders of magnitude less. These results are explained in terms of the unavailability of a sufficient density of vacancies at low temperatures.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 737
Copyright
Copyright © Materials Research Society 1987

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