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The Use of Disordered Interlayers to Enhance Nucleation of Silicon Nitride During Chemical Vapor Deposition

Published online by Cambridge University Press:  15 February 2011

Rachel E. Boekenhauer ,
Frederick S. Lauten  and
Brian W. Sheldon
Rachel E. Boekenhauer
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Frederick S. Lauten
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
Brian W. Sheldon
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
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Abstract

Thin, disordered interlayers were used to enhance the nucleation of Si3N4. Continuous crystalline films were formed at relatively low temperatures (<1250°C) by using an amorphous, Sirich interlayer. The interlayer was produced by varying the CVD conditions (i.e., by using multistep processing). Samples were characterized with XPS, SEM, and TEM with concurrent EELS. The results indicate that the nucleation of crystalline material is very sensitive to the structure and composition of the disordered interlayers. Also, the structure and composition of the interlayers evolve during growth, such that crystalline material only nucleates when the interlayer provides favorable conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 403: Symposium I – Polycrystalline Thin Films: Structure, Texture, Properties and Applications II , 1995 , 107
Copyright
Copyright © Materials Research Society 1996

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