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The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates

Published online by Cambridge University Press:  17 March 2011

D. Buca ,
M.J. Mörschbächer ,
B. Holländer ,
M. Luysberg ,
R. Loo ,
M. Caymax  and
S. Mantl
D. Buca
Affiliation:
Institut für Schichten und Grenzflächen (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich (FZJ), D-52425 Jülich, Germany
M.J. Mörschbächer
Affiliation:
Institut für Schichten und Grenzflächen (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich (FZJ), D-52425 Jülich, Germany
B. Holländer
Affiliation:
Institut für Schichten und Grenzflächen (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich (FZJ), D-52425 Jülich, Germany
M. Luysberg
Affiliation:
Institut für Festkörperforschung (IFF), FZJ
R. Loo
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
S. Mantl
Affiliation:
Institut für Schichten und Grenzflächen (ISG1) and cni - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich (FZJ), D-52425 Jülich, Germany
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Abstract

Strain relaxed Si1−xGex layers are attractive virtual substrates for the epitaxial growth of strained Si. Tensile strained Si has attracted a lot of attention due its superior electronic properties. In this study, the strain relaxation of pseudomorphic Si1−xGex layers grown by chemical vapor deposition (CVD) on Si(100) substrates was investigated after He+ ion implantation and thermal annealing. The implantation induced defects underneath the SiGe/Si interface promote strain relaxation during annealing via preferred nucleation of dislocation loops which form misfit dislocations at the interface to the substrate. The amount of strain relaxation as well as the final threading dislocation density depend on the implantation dose and energy. Si1−xGex layers with thicknesses between 75 and 420 nm and Ge concentrations between 19 and 29 at% were investigated. The strain relaxation strongly depends on the layer thickness. Typically the structures show ≈70 % strain relaxation and threading dislocation densities in the low 106 cm−2 range. AFM investigations proved excellent surface morphology with an rms roughness of 0.6 nm. The samples were investigated by Rutherford backscattering spectrometry, ion channeling, transmission electron microscopy and atomic force microscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B1.6
Copyright
Copyright © Materials Research Society 2004

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References

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