Since the introduction of the G1500 ion implanter, the use of tandem accelerators in production ion implantation systems has become well established. However, the beam currents which are attainable at present at low energies (< 200 keV) are suitable for only low and low-end medium dose implants. An approach to increase low energy beam currents in d.c. tandem accelerators is presented. Specifically, the use of negative ions which have been generated in the injector are transported to the end station and implanted into the wafers. In this work, beam current measurements performed using the G1500 system are presented for the typical semiconductor dopants. System changes which are necessary to accomplish implants with negative ions are discussed. A comparison of sheet resistances and uniformities measured with both positive and negative ions at the same energy and from the same G1500 system are presented. SIMS profile measurements of implants with both positive and negative ions at the same energy are also presented.