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Variation of the Photoelectric Threshold of Boron Doped Diamond Films

Published online by Cambridge University Press:  10 February 2011

I.A. Akwani ,
E.D. Sosa ,
J. Bernhard ,
S.C. Lim ,
R.E. Stallcup II ,
J.M. Perez  and
D.E. Golden
I.A. Akwani
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
E.D. Sosa
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
J. Bernhard
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
S.C. Lim
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
R.E. Stallcup II
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
J.M. Perez
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
D.E. Golden
Affiliation:
Department of Physics, University of North Texas, Denton, TX 76203
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Abstract

Boron doped polycrystalline diamond films grown on p-type single-crystal Si substrates using chemical vapor deposition with a gas mixture of hydrogen, methane and diborane were characterized with scanning electron microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Raman spectroscopy and photoelectric current measurements. The energy distributions are not sensitive to boron doping for diborane concentrations from 0 to 4.75 ppm, although the boron doping modifies the surface morphology and the photoemission intensity. The photoemission intensity is high where the microcrystalline content is highest (at diborane concentrations of 2.91 and 4.75 ppm. The photoelectric threshold is found to be at 4.38 eV, in agreement with earlier measurements. The present results are characteristic of valence band emission at 4.38, 4.63, 4.92, 5.12 and 5.30 eV for incident photons between 4.87 and 5.63 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 143
Copyright
Copyright © Materials Research Society 1998

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