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Vertically Aligned Single Crystalline ZnO Nanorods Grown by Hydrothermal Synthesis and the Theoretical Model for Predicting the Rod Density

Published online by Cambridge University Press:  01 February 2011

Soo Jin Chua
Affiliation:
elecsj@nus.edu.sg, Singapore-MIT Alliance, NUS, E4-04-10, 4 Engineering Drive 3,, Singapore 117576, Singapore, 117576, Singapore, (65) 65164784, (65) 6779 7454
Hong Quang LE
Affiliation:
g0200711@nus.edu.sg, Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3,, Singapore, Singapore, 117576, Singapore
Chuan Beng TAY
Affiliation:
taycb@nus.edu.sg, National University of Singapore, Dept of Electrical and Computer Engineering, 4 Engineering Drive 3,, Singapore, Singapore, 117576, Singapore
Kian Ping LOH
Affiliation:
chmlohkp@nus.edu.sg, National University of Singapore, Dept of Chemistry, 21 Lower Kent Ridge,, Singapore, Singapore, 117907, Singapore
Eugene Fitzgerald
Affiliation:
eafitz@mit.edu, MIT, Dept of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, United States
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Abstract

ZnO nanorods are grown by hydrothermal synthesis on a GaN substrate. The nanorods are charcterised by X-ray diffraction, photoluminescence and electron diffraction. A phenomenological model is proposed to predict the areal density and rod length.

Type
Research Article
Copyright
Copyright © Materials Research Society 2007

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References

REFERENCES

1. Le, H.Q, Chua, S.J, Koh, YW, Loh, KP, Chen, Z, Thompson, CV and Fitzgerald, EA, “Growth of single crystal ZnO nanorods on GaN using aqueous solution method”, Appl. Phys. Letts., vol. 87, p. 101908 (2005)Google Scholar
2. Le, HQ, Chua, SJ, Koh, YW, Loh, KP and Fitzgerald, EA “Systematic studies of the epitaxial growth of single crystal ZnO nanorods on GaN using hydrothermal synthesis”, Journal of Crystal Growth, vol. 293, pp. 3642, (2006)Google Scholar