Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-18T14:56:40.344Z Has data issue: false hasContentIssue false
  • English
  • Français

Very Low Temperature E-gun Evaporated Gate Oxide of TFTs on Plastic Substrates

Published online by Cambridge University Press:  17 March 2011

Cheon-Hong Kim ,
Sang-Hoon Jung  and
Min-Koo Han
Cheon-Hong Kim
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Sang-Hoon Jung
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Min-Koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, San 56-1 Shinlim-dong, Kwanak-gu, Seoul 151-742, Korea
Get access

Abstract

A high-quality silicon dioxide (SiO2) suitable for a gate oxide on plastic substrates is successfully deposited by e-gun evaporation at room temperature. The e-gun evaporated oxide film is free from troublesome hydrogen atoms and high-energy ion damage, which ensures good electrical characteristics. N2O/N2 plasma post-treatment was effective to reduce the flat band voltage and leakage current of the evaporated oxides due to the passivation of high-energy nitrogen and oxygen radicals. In the SiO2 film treated by N2O/N2 plasma for 1 minute, the flat band voltage has been reduced from −2.5V to about −0.5V and the leakage current has been decreased by more than one order. Our experimental results show that very low temperature SiO2 film suitable for a gate insulator of TFTs on the plastic substrates has been successfully obtained by the e-gun evaporation and N2O/N2 plasma post-treatment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 685: Symposium D – Advanced Materials and Devices for Large-Area Electronics , 2001 , 1D5.1.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Sandoe, J. N., SID 98 Dig., 293 (1998).Google Scholar
2. Gosain, D. P., Noguchi, T., Machida, A. and Usui, S., AMLCD'99, 239 (1999).Google Scholar
3. Carey, P. G., Smith, P. M., Thesis, S. D. and Wickboldt, P., J. Vac. Sci. technol. A 17, 1946 (1999).Google Scholar
4. Furukawa, K., Liu, Y., Nakashima, H., Gao, D., Kashiwazaki, Y., Uchino, K., Muraoka, K. and Tsuzuki, H., J. Appl. Phys. 84, 4579 (1998).Google Scholar
5. Deshmukh, S. C. and Aydil, E. S., Appl. Phys. Lett. 65, 3185 (1994).Google Scholar