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Via-Hole Addressed TFT and Process for Large-Area A-Si:H Electronics

Published online by Cambridge University Press:  15 February 2011

H. Gleskova ,
S. Wagneri  and
D. S. Shen
H. Gleskova
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
S. Wagneri
Affiliation:
Princeton University, Department of Electrical Engineering, Princeton, NJ 08544
D. S. Shen
Affiliation:
University of Alabama in Huntsville, Department of Electrical and Computer Engineering, Huntsville, AL 35899
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Abstract

We demonstrate a new technology for RC gate delay reduction, by fabricating an array of amorphous silicon thin-film transistors (a-Si:H TFTs) on a thin glass substrate provided with via holes. All gates are connected through via holes to a metal line that is run on the back side of the substrate. We opened via holes with a diameter of 35 to 50 μm in 50 μm glass foil. For the first time, all TFT pattern definition steps used a process which employs electrophotographic toner masks.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 869
Copyright
Copyright © Materials Research Society 1997

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References

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