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X-Ray Absorption Studies of Titanium Silicide Formation at the Interface of Ti Deposited on Si

Published online by Cambridge University Press:  25 February 2011

D.B. Aldrich ,
R.W. Fiordalice ,
H. Jeon ,
Q. Islam ,
R.J. Nemanich  and
D.E. Sayers
D.B. Aldrich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.W. Fiordalice
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
H. Jeon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 25695
Q. Islam
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
R.J. Nemanich
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202 Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 25695
D.E. Sayers
Affiliation:
Department of Physics, North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Near edge X-ray absorption spectra (XANES) have been obtained from the Ti K-edge for several series of titanium silicide samples produced by different techniques. Samples were fabricated by depositing Ti on silicon wafers and subsequently annealing them up to temperatures from 100°C to 900°C in UHV, vacuum furnace, or in a Rapid Thermal Annealing system. Measurements were done in the fluorescence and total electron yield modes. The XANES measurements were correlated with Raman scattering measurements. The XANES data of several reference compounds were obtained, and the data showed a high sensitivity to changes in the film structure. Ti metallic bonding and Ti-Si bonds can be distinguished and their evolution as a function of annealing is related to previous results. For the samples with increased impurities, Ti regions were stable at higher temperatures. The XANES spectra of samples annealed under N2 indicate the formation of a surface nitride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 167
Copyright
Copyright © Materials Research Society 1990

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References

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