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X-Ray Microbeam Measurement of Local Texture and Strain in Metals

Published online by Cambridge University Press:  10 February 2011

Jin-Seok Chung ,
N. Tamura ,
G. E. Ice ,
B. C. Larson  and
J. D. Budai
Jin-Seok Chung
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, Walter Lowe, Howard University, Washington D.C.
N. Tamura
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, Walter Lowe, Howard University, Washington D.C.
G. E. Ice
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, Walter Lowe, Howard University, Washington D.C.
B. C. Larson
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, Walter Lowe, Howard University, Washington D.C.
J. D. Budai
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN, Walter Lowe, Howard University, Washington D.C.
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Abstract

Synchrotron x-ray sources provide high-brilliance beams that can be focused to submicron sizes with Fresnel zone-plate and x-ray mirror optics. With these intense, tunable or broadbandpass x-ray microbeams, it is now possible to study texture and strain distributions in surfaces, and in buried or encapsulated thin films. The full strain tensor and local texture can be determined by measuring the unit cell parameters of strained material. With monochromatic or tunable radiation, at least three independent reflections are needed to determine the orientation and unit cell parameters of an unknown crystal. With broadbandpass or white radiation, at least four reflections and one measured energy are required to determine the orientation and the unit cell parameters of an unknown crystal. Routine measurement of local texture and strain is made possible by automatic indexing of the Laue reflections combined with precision calibration of the monochromator-focusing mirrors-CCD detector system. Methods used in implementing these techniques on the MHATT-CAT beam line at the Advanced Photon Source will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 563: Symposium M – Materials Reliability in Microelectronics IX , 1999 , 169
Copyright
Copyright © Materials Research Society 1999

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