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Yield of InxGa1-xAs Superlattices Under Bending and Nanoindentation

Published online by Cambridge University Press:  10 February 2011

Stephen J. Lloyd ,
Ken M.Y. P'ng ,
Andy J. Bushby ,
David J. Dunstan  and
William J. Clegg
Stephen J. Lloyd
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK
Ken M.Y. P'ng
Affiliation:
Centre for Materials Research, Queen Mary, University of London, London E1 4NS, UK
Andy J. Bushby
Affiliation:
Centre for Materials Research, Queen Mary, University of London, London E1 4NS, UK
David J. Dunstan
Affiliation:
Centre for Materials Research, Queen Mary, University of London, London E1 4NS, UK
William J. Clegg
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB2 3QZ, UK
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Abstract

A series of InxGa1-xAs superlattices grown on InP substrates with differing coherency strains have been deformed by bending at 500°C and by nanoindentation at room temperature. The deformation was characterised by transmission electron microscopy through examination of thin sections machined in a focused ion beam microscope. The bent samples sheared along {111} planes, and the most highly strained samples partially relaxed through the formation of misfit dislocations. Under indentation the majority of the plastic strain in the multilayers is accommodated by twinning whereas no twins were observed under indents in the InP substrate. The overall dimensions of the plastic zone increased linearly with indent load.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 778: Symposium U – Mechanical Properties Derived from Nanostructuring Materials , 2003 , U2.3
Copyright
Copyright © Materials Research Society 2002

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References

1. Clemens, B.M., Kung, H., and Barnett, S.A., Mater. Res. Soc. Bull. 24 (2), 20 (1999).Google Scholar
2. Brenchley, M.E., Hopkinson, M., Kelly, A., Kidd, P., and Dunstan, D.J., Phys. Rev. Lett. 78, 3912 (1997).Google Scholar
3. Jayaweera, N.B., Bushby, A.J., Kidd, P., Kelly, A., and Dunstan, D.J., Philos. Mag. Lett., 79, 343 (1999).Google Scholar
4. P'ng, K.M.Y., Bushby, A.J. and Dunstan, D.J., unpublished.Google Scholar
5. Lloyd, S.J., Molina-Aldareguia, J.M., and Clegg, W.J., J. Mater. Res. 16, 3347 (2001)Google Scholar
6. Lloyd, S.J., Molina-Aldareguia, J.M., and Clegg, W.J., Philos. Mag. A 82, 1963 (2002)Google Scholar
7. Molina-Aldareguia, J.M., Lloyd, S.J., Odén, M., Joelsson, T., Hultman, L., and Clegg, W.J., Philos. Mag. A 82, 1983 (2002).Google Scholar
8. Bushby, A.J., Non-destructive testing and evaluation, 17, 213 (2001).Google Scholar
9. Peyrade, J.P., Voillot, F., Goiran, M., Atmani, H., Rocher, A., and Bedel, E., Appl. Phys. Lett. 60, 2481 (1992).Google Scholar
10. Nabarro, F.R.N., Theory of crystal dislocations (Oxford University Press, 1967), p. 29.Google Scholar
11. Bushby, A.J., Downes, J.R., Jayaweera, N.B., Kidd, P., Kelly, A., and Dunstan, D.J., Mater. Res. Soc. Symp. Proc. 649, Q8–4 (2001)Google Scholar