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ZnS/Si/ZnS Quantum Well Structures for Visible Light Emission

Published online by Cambridge University Press:  15 February 2011

Eric Bretschneider
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
Albert Davydov
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
Clint McCreary
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
Li Wang
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
Timothy J. Anderson
Affiliation:
Chemical Engineering Department, University of Florida, Gainesville, FL 32611
H. Paul Maruska
Affiliation:
NZ Applied Technologies, 150-C New Boston Street, Woburn, MA 01801
Peter E. Norris
Affiliation:
NZ Applied Technologies, 150-C New Boston Street, Woburn, MA 01801
Ian Goepfert
Affiliation:
Dept of Electrical, Computer, Systems Engineering, Boston University, Boston, MA 02215
Theodore D. Moustakas
Affiliation:
Dept of Electrical, Computer, Systems Engineering, Boston University, Boston, MA 02215
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Abstract

Silicon multiple quantum wells confined by ZnS barriers have been grown by MOCVD. Calculations indicate that well widths must be less than 15Å for visible light emission, basically independent of the band offsets. No near-infrared photoluminescence (except bulk Si band-edge emission) was observed from samples with 70Å or greater Si layers, using stimulation at 325 nm with a He-Cd laser; hole trapping in ZnS may play a role. However, we found evidence of yellow light emission from samples which possibly contain Si quantum dots embedded in ZnS.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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