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Advances in Ion and Laser Beam Technology: Achievements of Japanese Government and University Projects

Published online by Cambridge University Press:  10 February 2011

Isao Yamada*
Affiliation:
Ion Beam Engieering Experimental Laboratory, Kyoto University, Sakyo, Kyoto 606, Japan, i-yamada@kuee.kyoto-u.ac.jp
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Abstract

This paper reviews recent R&D activity in advanced beam technologies funded by MITI and JST. A large-scale national project known as AMMTRA (Advanced Material-Processing and Machining Technology Research Association) funded by MITI has made a significant contribution to industrial applications of beam processing by developing high density ion and laser beam equipment. A subsequent program, the ACTA (Advanced Chemical Processing Technology Research Association) project involves development of multi-beam deposition systems for metal and dielectric materials formation including several systems which combine ion and laser beams, ion beams and CVD and plasma, and laser beams with sputtering. NEDO Proposal Based Project and JST (The Japan Science and Technology Corporation)-Exploitation and Application Study Project are fundamentally aimed to transfer technology from university to industry. Research in gas cluster ion beam technology is currently being conducted in the following areas: (i) shallow ion implantation for 0.1 μ m PMOS junction formation, (ii) high rate etching and smoothing for Si, diamond, SiC and metal oxide films and (iii) thin film depositions for optical filter and transparent conductive film. The gas cluster ion beam processes are discussed in comparison with traditional ion beam processing methods which are presently limited by available atomic and molecular ion beams.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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