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Aes and Xps Studies of Sulfur-Treated ALxGA1−xas Surfaces

Published online by Cambridge University Press:  25 February 2011

Hirotaka Ohno ,
Hidenori Kawanishi ,
Yoshiro Akagi ,
Masayoshi Koba  and
Toshiki Hijikata
Hirotaka Ohno
Affiliation:
Sharp Corporation, Corporate Research and Development Group, Tenri, Nara 632, JAPAN
Hidenori Kawanishi
Affiliation:
Sharp Corporation, Corporate Research and Development Group, Tenri, Nara 632, JAPAN
Yoshiro Akagi
Affiliation:
Sharp Corporation, Corporate Research and Development Group, Tenri, Nara 632, JAPAN
Masayoshi Koba
Affiliation:
Sharp Corporation, Corporate Research and Development Group, Tenri, Nara 632, JAPAN
Toshiki Hijikata
Affiliation:
Sharp Corporation, Corporate Research and Development Group, Tenri, Nara 632, JAPAN
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Abstract

Passivation of AlxGa1−xAs surfaces by ammonium sulfide treatment has been investigated. Enhancement of photoluminescence intensity and dramatic reduction of oxide peaks in spectra acquired by X-ray photoelectron spectroscopy on AlxGa1−x.As surfaces prepared by this treatment lead to the reduction of surface state density. It was found that sulfur atoms were mainly bonded to Al atoms in an Al-enriched specimen of AlxGa1−xAs(x=0.78). The surface compositions of Al-enriched specimen(x=0.43, 0.78) were also found to be As-rich as a result of both sulfur treatment and the preferential etching of metallic atoms by an acidic solution, which prevents the initial oxidation of the surface of A1xGa1−xAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 204: Symposium E – Chemical Perspectives of Microelectronic Materials II , 1990 , 65
Copyright
Copyright © Materials Research Society 1991

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References

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