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Air Stable, Amorphous Organic Films and their Applications to Solution Processable Flexible Electronics

Published online by Cambridge University Press:  15 March 2011

Janos Veres
Affiliation:
AVECIA, Hexagon House, P.O. Box 42, Manchester, M9 8ZS, U.K.
Simon Ogier
Affiliation:
AVECIA, Hexagon House, P.O. Box 42, Manchester, M9 8ZS, U.K.
Stephen Leeming
Affiliation:
AVECIA, Hexagon House, P.O. Box 42, Manchester, M9 8ZS, U.K.
Beverley Brown
Affiliation:
AVECIA, Hexagon House, P.O. Box 42, Manchester, M9 8ZS, U.K.
Domenico Cupertino
Affiliation:
AVECIA, Hexagon House, P.O. Box 42, Manchester, M9 8ZS, U.K.
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Abstract

The rapidly expanding field of organic semiconductors for display and low-cost electronic applications requires materials, which not only have high mobility but also benefit from solution processability and environmental stability. In this paper we present a new class of solution coatable organic materials with excellent stability to air and light. Spin-coated FET devices operate at ambient conditions without encapsulation and show p-type field-effect mobilities of 2 x 10-3 cm2V-1s-1 and on/off ratios greater than 104. Thin films can be deposited from common organic solvents onto a variety of substrates. These films are mechanically robust and can withstand temperatures in excess of 100 °C without significant changes in electrical performance. FET switching and transient characteristics at higher frequencies are also discussed. These types of materials should find applications in many areas of flexible electronics.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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References

REFERENCES

1. Dimitrakopoulos, C. D. and D. Mascaro, J., IBM J. Res.&Dev. 45, 11 (2001).Google Scholar
2. Garnier, F., Chem. Phys. 227, 253 (1998).Google Scholar
3. Drury, C. J., Mutsaers, C. J. M., C. Hart, M., Matters, M. and Leeuw, D. M. de, Appl. Phys. Lett. 73, 108 (1998).Google Scholar
4. Brown, A. R., Jarrett, C. P., Matters, M. and Leeuw, D. M. de, Synth. Met. 88, 37 (1997).Google Scholar
5. Sirringhaus, H., Tessler, N. and Friend, R., Science 280, 1741 (1998).Google Scholar
6. Sirringhaus, H., Tessler, N. and Friend, R., Synth. Met. 102, 857 (1999).Google Scholar
7. Garnier, F., Yassar, A., Hajlaoui, R., Horowitz, G., Deloffre, F., Servet, B., Ries, S. and Alnot, P., J. Am. Chem. Soc. 115, 8716 (1993).Google Scholar
8. Sirringhaus, H., Wilson, R.J., Friend, R.H., Inbasekaran, M., Wu, W., Woo, E.P, Grell, M. and Bradley, D.D.C., Appl. Phys.Lett. 77, 3 (2000).Google Scholar
9. Brown, A.R., Jarrett, C.P., Leeuw, D.M. and Matters, M., Synth. Met. 88, 37 (1997).Google Scholar