Hostname: page-component-78c5997874-g7gxr Total loading time: 0 Render date: 2024-11-19T12:05:23.993Z Has data issue: false hasContentIssue false
  • English
  • Français

An Important Failure Mechanism in MOCVD (Ba,Sr)TiO3 thin Films: Resistance Degradation

Published online by Cambridge University Press:  10 February 2011

C. Basceri ,
S. E. Lash ,
C. B. Parker ,
S. K. Streiffer ,
A. I. Kingon ,
M. Grossmann ,
S. Hoffmann ,
M. Schumacher ,
R. Waser  and
S. Bilodeau
...Show all authors
C. Basceri
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
S. E. Lash
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
C. B. Parker
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
S. K. Streiffer
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
A. I. Kingon
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907
M. Grossmann
Affiliation:
RWTH Aachen, D-52056, Germany
S. Hoffmann
Affiliation:
RWTH Aachen, D-52056, Germany
M. Schumacher
Affiliation:
RWTH Aachen, D-52056, Germany
R. Waser
Affiliation:
RWTH Aachen, D-52056, Germany
S. Bilodeau
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810-4169
R. Carlt
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810-4169
P. C. Van Buskirk
Affiliation:
Advanced Technology Materials Inc., 7 Commerce Drive, Danbury, CT 06810-4169
S. R. Summerfelt
Affiliation:
Texas Instruments, PO Box 655012, MS 921, Dallas, TX 75265
Get access

Abstract

We have investigated the intrinsic resistance degradation behavior of fiber-textured MOCVD (Ba,Sr)TiO3 thin films appropriate for use in advanced DRAMs and integrated decoupling capacitors, as a function of applied voltage polarity, thickness, temperature, and dc bias/field. The results suggest that there is a significant stoichiometry effect on the measured resistance degradation lifetimes. The measured degradation lifetime increases as the Ti content is increased from 51.0 to 52.0 at%Ti, and then decreases with higher at%Ti. Predicted resistance degradation lifetimes obtained from both temperature and voltage extrapolations to DRAM operating conditions of 85°C and 1.6 V exceed the current benchmark of 10 years for all of the films studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 9
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Numata, K., Fukuda, Y., Aoki, K., and Nishimura, A., Jpn. J. Appl. Phys. 34, 5245 (1995).Google Scholar
[2] Shimada, Y., Inoue, A., Nasu, T., Nagano, Y., Matsuda, A., Arita, K., Uemoto, Y., Fuji, E., and Otsuki, T., Jpn. J. Appl. Phys. 35, 4919 (1996).Google Scholar
[3] Horikawa, T., Kawahara, T., Yamamuka, M., and Ono, K., 1997 International Reliability Physics Symposium, in press.Google Scholar
[4] Basceri, C., Wells, M.A., Streiffer, S.K., Kingon, A.I., Bilodeau, S., Carl, R., van Buskirk, P.C., Summerfelt, S.R., and McIntyre, P., Proc. of the 1996 IEEE Int. Symp. Appl. Ferro., 51 (1996).Google Scholar
[5] Summerfelt, S. R., Kotecki, D., Kingon, A. I., and Al-Shareef, H. N., MRS Proceedings 361, 257 (1995).Google Scholar
[6] Kirlin, P., Bilodeau, S., and van Buskirk, P. C., Integr. Ferroelectr. 7, 307 (1995);Google Scholar
van Buskirk, P. C., Bilodeau, S., Roeder, J., and Kirlin, P., Jpn. J. Appl. Phys. 35, 2520 (1996).Google Scholar
[7] Streiffer, S. K., Basceri, C., Kingon, A. I., Lipa, S., Bilodeau, S., Carl, R., and van Buskirk, P. C., MRS Proceedings 415, 219 (1996).Google Scholar
[8] Chen, X., Kingon, A. I., Al-Shareef, H. N., and Bellur, K. R., Ferroelectrics 151, 133 (1994).Google Scholar
[9] Ivey, M., Mancha, S., and Carter, R., 4th International SAMPE Electronics Conference 4, 686 (1990).Google Scholar
[10] Waser, R., Baiatu, T., and Härdtl, K.-H., J. Am. Cer. Soc. 73, 1645 (1990); 73, 1654 (1990);Google Scholar
Baiatu, T., Waser, R., and Härdtl, K.-H., J. Am. Cer. Soc., 73, 1663 (1990).Google Scholar
[11] Basceri, C., Streiffer, S. K., Kingon, A. I., and Waser, R., J. Appl. Phys. 82, 2497 (1997).Google Scholar
[12] Copel, M., Duncombe, P. R., Neumayer, D. A., Shaw, T. M., and Tromp, R. M., Appl. Phys. Lett. 70, 3227 (1997).Google Scholar
[13] Al-Shareef, H. and Dimos, D., Proc. of the 1996 IEEE Int. Symp. Appl. Ferro., 421 (1996).Google Scholar
[14] Chan, N.-H., Sarma, R. K., and Smyth, D. M., J. Am. Ceram. Soc. 64, 556 (1981);Google Scholar
Sharma, R. K., Chan, N.-H., and Smyth, D. M., J. Am. Ceram. Soc., 64, 448 (1981).Google Scholar
[15] Ruddlesden, S. N. and Popper, P., Acta Crystallogr. 11, 54 (1958).Google Scholar