Hostname: page-component-78c5997874-m6dg7 Total loading time: 0 Render date: 2024-11-19T12:15:31.729Z Has data issue: false hasContentIssue false
  • English
  • Français

Analysis of growth rate of silicon nanowires

Published online by Cambridge University Press:  01 February 2011

J. Kikkawa ,
Y. Ohno  and
S. Takeda
J. Kikkawa
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Osaka 560–0043, Japan
Y. Ohno
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Osaka 560–0043, Japan
S. Takeda
Affiliation:
Department of Physics, Graduate School of Science, Osaka University, 1–1 Machikaneyama, Osaka 560–0043, Japan
Get access

Abstract

We have measured the growth rate of silicon nanowires (SiNWs) in the diameter range of 3 to 40 nm (8.4 nm on average), which were grown by chemical vapor deposition (CVD) at temperatures between 365 °C and 495 °C. It is found that SiNWs with smaller diameters grow slower than those with larger ones, and a critical diameter at which growth stops completely exists. The growth rate of the thinner SiNWs stronger depends on growth temperature than that of thicker ones in previous studies. We discuss the dependence by thermodynamics theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F7.25
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Morales, A. M. and Lieber, C. M., Science 279, 208 (1998).Google Scholar
2. Ozaki, N., Ohno, Y. and Takeda, S., Appl. Phys. Lett. 73, 3700 (1998).Google Scholar
3. Givargizov, E. I., J. Cryst. Growth 31, 20 (1975).Google Scholar
4. Bootsma, G. A. and Gassen, H. J., J. Cryst. Growth 10, 223 (1971).Google Scholar
5. Lew, K.-K. and Redwing, J. M., J. Cryst. Growth 254, 14 (2003).Google Scholar
6. Takeda, S., Ueda, K., Ozaki, N. and Ohno, Y., Appl. Phys. Lett. 82. 979 (2003).Google Scholar
7. Onischuk, A. A., Strunin, V. P., Ushakova, M. A. and Panfilov, V. N., Int. J. Chem. Kinet. 30, 99 (1998).Google Scholar
8. Westwater, J., Gosain, D. P., Tomiya, S. and Usui, S., J. Vac. Technol. B 15, 554 (1997).Google Scholar
9. submitting for publication (2004).Google Scholar
10. Purnell, J. H. and Walsh, R., Proc. R. Soc. A 293, 543 (1966).Google Scholar
11. Meyerson, B. S. and Jasinski, J. M., J. Appl. Phys. 61, 785 (1987).Google Scholar
12. Dubois, L. H. and Nuzzo, R. G., J. Vac. Sci. Technol. A 2, 441 (1984).Google Scholar
13. Decker, C. A., Solanki, R., Freeouf, J. L., Carruthers, J. R. and Evans, D. R., Appl. Phys. Lett. 84, 1389 (2004).Google Scholar
14. Tan, T. Y., Li, N. and Gösele, U., Appl. Phys. Lett. 83, 1199 (2003).Google Scholar