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Analysis of Teos Silicon Dioxide: The Identification of Carbonatious Contaminants

Published online by Cambridge University Press:  10 February 2011

M. L. Pereira Da Silva ,
A. Romanelli Cardoso  and
J. J. Santiago-Aviles
M. L. Pereira Da Silva
Affiliation:
LSI/ PEE/ EPUSP, University of Sao Paulo, Sao Paulo, Brazil
A. Romanelli Cardoso
Affiliation:
LSI/ PEE/ EPUSP, University of Sao Paulo, Sao Paulo, Brazil
J. J. Santiago-Aviles
Affiliation:
Dept. of EE, University of Pennsylvania, Philadelphia, PA, 19104
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Abstract

This work presents the analysis performed on a SiO2 film deposited from organometallic precursors with the aim of correlating their physico-chemical properties including electrical characteristics with processing variables. The characterization tools used in this study included SEM for film homogeneity; SIMS for the determination of total carbon content; FT-MS and Raman scattering spectroscopy for surface characterization. GC-MS was used to understand the electrochemical reactions taking place while performing I-V characteristics measurements.

The use of these multiple characterization techniques pointed out to deposited films with reasonable deposition characteristics but poor electrical ones. Phase segregated heterogeneity's rich in carbonatious residues influenced the degradation of the electrical characteristics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 500: Symposium EE – Electrically Based Microstructural Characterization II , 1997 , 97
Copyright
Copyright © Materials Research Society 1998

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References

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