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Annealing Characteristics Of Low Temperature Grown GaAs:Be

Published online by Cambridge University Press:  15 February 2011

D. E. Bliss ,
W. Walukiewicz ,
K. T. Chan ,
J. W. Ager III ,
S. Tanigawa  and
E. E. Haller
D. E. Bliss
Affiliation:
Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 Dept. of Materials Science, University of California at Berkeley, Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
K. T. Chan
Affiliation:
Hewlett-Packard Co. Microwave Technology Division, Santa Rosa, CA 95403
J. W. Ager III
Affiliation:
Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720
S. Tanigawa
Affiliation:
Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan
E. E. Haller
Affiliation:
Center for Advanced Materials, Materials Science Division, Lawrence Berkeley Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720 Dept. of Materials Science, University of California at Berkeley, Berkeley, CA 94720
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Abstract

We have studied the annealing characteristics of acceptor doped GaAs:Be grown at Low substrate Temperatures (300°C) by Molecular Beam Epitaxy (LTMBE). The Be was introduced in a range of concentrations from 1016 –1019 cm−3. As-grown material was found to be n-type even up to the highest Be concentration of 1019 cm−3 although Raman spectroscopy of the Be local vibrational mode indicates that the majority of the Be impurities are substitutional. We propose that Be acceptors are rendered inactive by the high concentration of AsGa-related native donor defects present. Results of slow positron annihilation studies indicate an excess concentration of VGa in LTMBE layers over bulk grown crystals. A distinct annealing stage at 500°C, similar to irradiation damaged and plastically deformed GaAs, marks a rapid decrease in the AsGa defect concentration. A second annealing stage at 800°C corresponds to the activation of Be acceptors. Analysis of isothermal annealing kinetics for the removal of AsGa-related defects gives an activation energy of 1.7 ±0.3 eV. We model the defect removal mechanism with the VGa assisted diffusion of ASGa to As precipitates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 241 , 1991 , 93
Copyright
Copyright © Materials Research Society 1992

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References

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