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Atomic Structure of Dislocations and Interfaces in Semiconductor Heterostructures

Published online by Cambridge University Press:  25 February 2011

A. S. Nandedkar ,
S. Sharan  and
J. Narayan
A. S. Nandedkar
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, N.C. 27695-7916
S. Sharan
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, N.C. 27695-7916
J. Narayan
Affiliation:
North Carolina State University, Dept. of Materials Science and Engineering, Raleigh, N.C. 27695-7916
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Abstract

We have studied and analyzed critical thickness required for the formation of misfit dislocations in semiconductor heterostructures. The present analysis has been carried out assuming that the nucleation of a misfit dislocation is controlled by the activation energy. The energy of the cohernt interface and the misfit dislocation configuration has been evaluated using a discrete dislocation analysis. Further, atomic structures of coherent and semicoherent interfaces containing misfit dislocations of the type a/2<110={111} ↑ <110= (600 dislocation), a/2<110={001} ↑ <110= (90° dislocation) and a/6<112={111} ↑ <110= (90° partial dislocation) in Ge/Si system were simulated. The total energy, consisting of both core and elastic energy components, was calculated using Stillinger-Weber interatomic potentials. The results show that the energy is a strong function of the nature of dislocations. A 60° dislocation is found to exist in undissociated form in shuffle configuration, but the core contains a dangling bond at the interface. The core of a 90° dislocation reconstructs at the Ge/Si interface with no dangling bonds. The calculated atomic configurations of dislocations and interfaces are found to be in good agreement with high resolution transmission electron microscopy observations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 121
Copyright
Copyright © Materials Research Society 1990

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References

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