Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-02T23:33:25.416Z Has data issue: false hasContentIssue false
  • English
  • Français

Bias Controlled Hot Filament Chemical Vapor Deposition of Diamond Thin Film on Various Substrates

Published online by Cambridge University Press:  26 February 2011

Y. H. Lee ,
G.-H. Ma ,
K. J. Bachmann  and
J. T. Glass
Y. H. Lee
Affiliation:
North Carolina State University, Materials Science and Engineering Department, Raleigh, NC 27695-7907
G.-H. Ma
Affiliation:
North Carolina State University, Materials Science and Engineering Department, Raleigh, NC 27695-7907
K. J. Bachmann
Affiliation:
North Carolina State University, Materials Science and Engineering Department, Raleigh, NC 27695-7907
J. T. Glass
Affiliation:
North Carolina State University, Materials Science and Engineering Department, Raleigh, NC 27695-7907
Get access

Abstract

The growth of diamond films on Si(001), polycrystalline Ni, Mo, Ta, and W substrates by biased controlled chemical vapor deposition is discussed. Biasing effects were examined using the Si(001) substrates. The film quality as judged by Raman spectroscopy and scanning electron microscopy depended strongly on the biasing conditions. Under low current reverse bias conditions, highly faceted cubooctahedral polycrystalline diamond growth exhibiting a single sharp Raman line at 1332 cm-1 was obtained. Transmission electron microscopy indicated that these films contained relatively low defect densities and no significant interfacial layers. Biasing into high current conditions which created a plasma resulted in multiply twinned, microcrystalline growth incorporating sp2 bonded carbon into the diamond film. Such films were found to contain very high defect densities and a relatively thick interfacial layer. An investigation of the effects of substrate material was also conducted. Films grown on Si, Ni and W exhibited the best quality. The relationship between this quality and substrate properties such as surface energy and lattice parameter is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 119
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFRENCES

1. Matsumoto, S., Sato, Y., Kamo, M., and Setaka, N., J. Appl. Phys. 21 483 (1982).Google Scholar
2. Kamo, M., Sato, Y., Matsumoto, S., and Setaka, N., J. Cryst. Growth 62 642 (1983).Google Scholar
3. Sawabe, A. and Inuzuka, T., Appl. Phys. Lett. 46, 146 (1985).Google Scholar
4. Hiraki, A., Kawano, T., Kawakami, Y., Hayashi, M., and Miyasato, T., Solid State Comm. 50, 713 (1984).Google Scholar
5. Aisenberg, A. and Chabot, R., J. Appl. Phys. 4, 2953 (1971).Google Scholar
6. Lee, Y. H., Kong, H. S., Richard, P. D., Glass, J. T., Bachmann, K. J., LeGrice, Y. M. and Nemanich, R. J. in the Summary of 4th SDIO/IST Diamond Technology Initiative Symposium, Crystal City, VA, July 1989.Google Scholar
7. Lee, Y. H., Richard, P. D., Bachmann, K. J., and Glass, J. T., Appl. Phys. Lett., in press.Google Scholar
8. Pepper, S., Appl. Phys. Lett. 3, 344 (1981).Google Scholar
9. Lee, Y. H., Bachmann, K. J., Glass, J. T., LeGrice, Y. M., R. J. Nemanich submitted to Appl. Phys. Lett.Google Scholar
10. Kern, R., LeLay, G. and Metois, I. I., Basic Mechanisms in the Early Stages of Epitaxy, Current Topics in Materials Science, Volume 3, edited by Kaldis, E. (North-Holland Pub. Co., 1979) p135.Google Scholar
11. Hondros, E. D. in the Proc. TMS-AIME Heat Treatment Committee at the 1976 TMS Fall Meeting, Niagara Falls, NY, September 1976.Google Scholar
12. Takai, T., Halicioglu, T. and Tiller, W. A., Surf. Sci. 164, 341 (1985).Google Scholar