Hostname: page-component-586b7cd67f-dlnhk Total loading time: 0 Render date: 2024-11-23T00:08:08.717Z Has data issue: false hasContentIssue false
  • English
  • Français

Blue and Yellow Electroluminescence of MOSLED Made on Si-rich SiOx Film with Detuning Buried Si Nanoclusters Size

Published online by Cambridge University Press:  01 February 2011

Gong-Ru Lin ,
Chi-Wee Liu ,
Chin-Hua Hsieh ,
Li-Jen Chou  and
Gong-Ru Lin
Gong-Ru Lin
Affiliation:
National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Chi-Wee Liu
Affiliation:
National Taiwan University, Graduate Institute of Electronics Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Chin-Hua Hsieh
Affiliation:
National Tsing Hua University, Department of Materials Science and Engineering, No. 101, Section 2, Kuang Fu Rd., Hsinchu, 300, Taiwan
Li-Jen Chou
Affiliation:
National Tsing Hua University, Department of Materials Science and Engineering, No. 101, Section 2, Kuang Fu Rd., Hsinchu, 300, Taiwan
Gong-Ru Lin
Affiliation:
grlin@ntu.edu.tw, National Taiwan University, Graduate Institute of Photonics and Optoelectronics and Department of Electrical Engineering, No. 1, Roosevelt Rd. Sec. 4, Taipei, 10617, Taiwan
Get access

Abstract

We have demonstrated the blue and yellow electroluminescence of MOSLEDs made on Si-rich SiOx film with buried Si nanoclusters of different sizes. The situation of dehydrogenation of Si nanocrystals within the SiOx film becomes more pronounced then the re-growth of SiO2 matrix along with the prolongation of annealing time period. A linear variation on the O/Si composition ratio of the Si-rich SiOx film related to the deposition recipe is reported, giving rise to the precipitation of Si nanocrystals with different size. With such synthesis conditions, the SiOx films result in relatively strong photoluminescence at blue and yellow colors. From the comparison of the I–V curves we can conclude that there is a linear decrease on the threshold voltage of the SiOx based MOSLEDs by decreasing the thickness of the SiOx layer. According to EL pattern, we could demonstrate that the yellow- and blue-light pattern can be observed at 5.5 and 7.25 MV/cm, respectively.

Keywords

Siplasma-enhanced CVD (PECVD) (deposition)film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1066: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology—2008 , 2008 , 1066-A15-06
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, N.M., Kim, T.S., and Park, S.J., “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett., vol. 78, pp. 2575–2577, (2001).Google Scholar
2. Furukawa, S. and Miyasato, T. “3-Dimensional quantum well effects in ultrafine Silicon particles,” Jpn. J. Appl. Phys., vol. 27, L2207–2209, (1988).Google Scholar
3. Liao, L.S., Bao, X.M., Zhang, X.Q., Li, N.S., and Min, N.B., “Blue luminescence from Si+-implanted SiO2 films thermally grown on crystalline silicon,” Appl. Phys. Lett., vol. 68, pp. 850–852, (1996)Google Scholar
4. Ehbrecht, M. Kohn, B. Huisken, F. Laguna, M. A., and Paillard, V. “Photoluminescence and resonant Raman spectra of silicon films produced by size-selected cluster beam deposition,” Phys. Rev. B, vol. 56, pp. 6958–6964, (1997).Google Scholar
5. Patrone, L. Nelson, D. Safaov, V. I., Sentis, M. Marine, W. and Giorgio, S. “Photoluminescence of silicon nanoclusters with reduced size dispersion produced by laser ablation,” J. Appl. Phys., vol. 87, pp. 3829–3837, (2000).Google Scholar