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Characteristics of Si-Sb-Te Films for Phase Change Memory

Published online by Cambridge University Press:  01 February 2011

Jie Feng ,
Yin ZHANG ,
Baowei Qiao ,
Yanfei Cai ,
Yinyin Lin ,
Tingao Tang ,
Bingchu Cai  and
Bomy Chen
Jie Feng
Affiliation:
jfeng@sjtu.edu.cn, Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of, 86-21-62823631
Yin ZHANG
Affiliation:
zy13225@163.com, Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of
Baowei Qiao
Affiliation:
qbwhappy@sjtu.edu.cn, Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of
Yanfei Cai
Affiliation:
yylin@fudan.edu.cn, Fudan University, State Key Laboratory of ASIC £¦ System, Shanghai, N/A, 200433, China, People's Republic of
Yinyin Lin
Affiliation:
yylin@fudan.edu.cn, Fudan University, State Key Laboratory of ASIC £¦ System, Shanghai, N/A, 200433, China, People's Republic of
Tingao Tang
Affiliation:
tatang@fudan.edu.cn, Fudan University, State Key Laboratory of ASIC £¦ System, Shanghai, N/A, 200433, China, People's Republic of
Bingchu Cai
Affiliation:
bccai@sjtu.edu.cn, Shanghai Jiao Tong University, Key lab. for thin film and microfabrication of Ministry of Education, Inst. of Micro/Nano Sci.& Tech, 1954 Huasan Road, Shanghai, N/A, 200030, China, People's Republic of
Bomy Chen
Affiliation:
bchen@sst.com, Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA 94086, United States
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Abstract

The novel phase change materials Si-Sb-Te films were prepared. The crystallization temperature of films increases with the increasing of Si concentration. Phase separation was observed in the Si-Sb-Te films, the dominant phase is Sb2Te3. The melting temperature of Si-Sb-Te decreased to ~550°C lower than 640°C of Ge2Sb2Te5. The decrease of film thickness of Si-Sb-Te films is less than 2% after annealing at 400°C, which is less than ~7% of the film thickness change of Ge2Sb2Te5 film. The crystalline resistivity of Si-Sb-Te films increased and the ratio of amorphous/crystalline resistivity of Si-Sb-Te films increased also comparing with Ge2Sb2Te5 film, which is benefit to reduce the writing current and keep higher on/off ratio of phase change memory. Reversible switch was performed in the devices with Si-Sb-Te films. The device with Si14.3Sb28.6Te57.2 film can be programmed with a 100 ns SET pulse and a 20 ns RESET pulse. The Reset current is only 1.37mA for a 10μm-sized device.

Keywords

phase transformationfilmdevices
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 918: Symposium H – Chalcogenide Alloys for Reconfigurable Electronics , 2006 , 0918-H08-04
Copyright
Copyright © Materials Research Society 2006

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