Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-26T22:41:56.664Z Has data issue: false hasContentIssue false
  • English
  • Français

Characterization of ZnO Nanostructures Grown by Pulsed Laser Deposition

Published online by Cambridge University Press:  31 January 2011

Christian Weigand ,
Matthew R Bergren ,
Cecile Ladam ,
Per Erik Vullum ,
John C Walmsley ,
Ragnar Fagerberg ,
Tom E Furtak ,
Reuben Collins ,
Jostein Grepstad  and
Helge Weman
Christian Weigand
Affiliation:
christian.weigand@iet.ntnu.no, Norwegian University of Science and Technology, Electronics and Telecommunications, Trondheim, Norway
Matthew R Bergren
Affiliation:
mbergren@mines.edu, Colorado School of Mines, Deparment of Physics, Golden, Colorado, United States
Cecile Ladam
Affiliation:
Cecile.Ladam@sintef.no, SINTEF, Materials and Chemistry, Trondheim, Norway
Per Erik Vullum
Affiliation:
Per.Erik.Vullum@sintef.no, SINTEF, Materials and Chemistry, Trondheim, Norway
John C Walmsley
Affiliation:
John.Walmsley@sintef.no, SINTEF, Materials and Chemistry, Trondheim, Norway
Ragnar Fagerberg
Affiliation:
ragnar.fagerberg@sintef.no, SINTEF, Materials and Chemistry, Trondheim, Norway
Tom E Furtak
Affiliation:
tfurtak@mines.edu, Colorado School of Mines, Department of Physics, Golden, Colorado, United States
Reuben Collins
Affiliation:
rtcollin@mines.edu, Colorado School of Mines, Department of Physics, Golden, Colorado, United States
Jostein Grepstad
Affiliation:
jostein.grepstad@iet.ntnu.no, Norwegian University of Science and Technology, Electronics and Telecommunications, Trondheim, Norway
Helge Weman
Affiliation:
helge.weman@iet.ntnu.no, Norwegian University of Science and Technology, Electronics and Telecommunications, Trondheim, Norway
Get access

Abstract

ZnO nanostructures were grown by pulsed laser deposition on c-plane sapphire substrates. The as-grown nanostructures were examined by scanning electron microscopy and transmission electron microscopy ZnO nanowires were grown using a gold catalyst, at a high substrate temperature of 800°C and an ambient gas pressure of 0.5 mbar (5% oxygen, 95% argon). Changing the gas composition to pure oxygen led to the growth of stacking fault-free ZnO nanosheets with their growth direction inclined to the [0001] direction. Similar nanosheets with stacking faults were found when lowering the growth temperature to 600°C for a 5% oxygen – 95% argon ambient gas composition and the same overall pressure. A growth mechanism for these ZnO nanosheets is proposed.

Keywords

laser ablationnanostructurenucleation & growth
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1174: Symposium V – Functional Metal-Oxide Nanostructures , 2009 , 1174-V07-09
Copyright
Copyright © Materials Research Society 2009

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Yi, G.-C., Wang, C. and Park, W. I. Semiconductor Science and Technology 20, S22–S23 (2005).Google Scholar
2 Galoppini, E. et al.,Journal of Physical Chemistry B 110, 16159–16161 (2006).Google Scholar
3 Ham, H. et al. , Chemical Physics Letters 404, 69–73 (2005).Google Scholar
4 Kong, Y. C. et al. , Applied Physics Letters 78, 407–409 (2001).Google Scholar
5 Park, J.-H. Hwang, I.-S., Choi, Y.-J. and Park, J.-G., Journal of Crystal Growth 276 (1-2), 171–176 (2005).Google Scholar
6 Wagner, R. S. and Ellis, W. C. Applied Physics Letters 4 (5), 89–90 (1964).Google Scholar
7 Liu, Z. W. Ong, C. K. Yu, T. and Shen, Z. X. Applied Physics Letters 88, 053110 (2006).Google Scholar
8 Wu, J.-J. and Liu, S.-C., Journal of Physical Chemistry B 106, 9546–9551 (2002).Google Scholar
9 Sun, Y. Fuge, G. M. and Ashfold, M. N. R. Superlattices and Microstructures 39, 33–40 (2006).Google Scholar
10 Liu, Z. W. and Ong, C. K. Materials Letters 61 (16), 3329–3333 (2007).Google Scholar
11 Song, Y. W. Lee, S. and Lee, S. Y. Journal of Crystal Growth 310 (21), 4612–4615 (2008).Google Scholar