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CMOS Compatible Erbium Coupled Si Nanocrystal Thin Films for Microphotonics

Published online by Cambridge University Press:  01 February 2011

M. Stolfi ,
L. Dal Negro ,
J. Michel ,
X. Duan ,
J. Le Blanc ,
J. Haavisto  and
L.C. Kimerling
M. Stolfi
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue Cambridge, MA 02139
L. Dal Negro
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue Cambridge, MA 02139
J. Michel
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue Cambridge, MA 02139
X. Duan
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue Cambridge, MA 02139
J. Le Blanc
Affiliation:
Charles Stark Draper Laboratory, 555 Technology Square Cambridge, MA 02139
J. Haavisto
Affiliation:
Charles Stark Draper Laboratory, 555 Technology Square Cambridge, MA 02139
L.C. Kimerling
Affiliation:
Massachusetts Institute of Technology, 77 Massachusetts Avenue Cambridge, MA 02139
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Abstract

Er doped Si-rich SiO2 films were deposited through reactive RF magnetron co-sputtering and subjected to a single annealing step to simultaneously form silicon nanocrystals (Si-nc's) and activate the Er emission. Reference Er in stoichiometric SiO2 (Er:SiO2) films were deposited for comparison and the Er emission in the presence of Si-nc's was optimized with respect to the annealing temperature. The Er emission from Er in SiO2 containing Si-nc's (Er:SiO2+Si-nc) films is maximized at annealing temperatures between 600 °C and 800 °C, where the 1.54 μm emission is enhanced by more than two orders of magnitude relative to Er:SiO2 samples. Efficient energy coupling between Si-nc's and Er ions was demonstrated through excitation cross section measurements and non-resonant Er excitation experiments for samples annealed at temperatures as low as 600 °C. Since strong emission can be achieved from Er:SiO2+Si-nc films deposited through a standard CMOS process and annealed at temperatures below 700 °C, they can be used to fabricate CMOS compatible light

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F11.8
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y.H., Poate, J.M., Kimerling, L.C., J. Appl. Phys., 70, 2672 (1991)Google Scholar
2. Zheng, B., Michel, J., Ren, F.Y.G., Kimerling, L.C., Jacobson, D.C., Poate, J.M., Appl. Phys. Lett., 64, 2842, (1994)Google Scholar
3. Palm, J., Gan, F., Zheng, B., Michel, J., Kimerling, L.C., Phys. Rev. B, 54, 17603 (1996)Google Scholar
4. Franzò, G., Priolo, F., Coffa, S., Polman, A., Carnera, A., Appl. Phys. Lett., 64, 2235 (1994)Google Scholar
5. Priolo, F., Franzò, G., Coffa, S., Carnera, A., Phys. Rev. B., 57, 4443 (1998)Google Scholar
6. Coffa, S., Franzò, G., Priolo, F., Appl. Phys. Lett., 69, 2077 (1996)Google Scholar
7. Kenyon, A.J., Trwoga, P.F., Federighi, M., Pitt, C.W., J. Phys. Condens. Matter, 6, L319 (1994)Google Scholar
8. Fujii, M., Yoshida, M., Kanzawa, Y., Hayashi, S., Yamamoto, K., Appl. Phys. Lett., 71, 1198 (1997)Google Scholar
9. Franzo, G., Iacona, F., Vinciguerra, V., Priolo, F., Mater. Sci. Eng. B, 69/70, 338 (1999)Google Scholar
10. Kik, P.G., Polman, A., J. Appl. Phys., 88, 1992 (2000)Google Scholar
11. Priolo, F., Franzò, G., Pacifici, D., Vinciguerra, V., Iacona, F., Irrera, A., J. Appl. Phys., 89, 264 (2001)Google Scholar
12. Priolo, F., Franzò, G., Iacona, F:, Pacifici, D., Vinciguerra, V., Mater. Sci. Eng. B, 81, 9 (2001)Google Scholar
13. Iacona, F., Pacifici, D., Irrera, A., Miritello, M., Franzò, G., Priolo, F., Sanfilippo, D., Di Stefano, G., Fallica, P.G., Appl. Phys. Lett., 81, 3242, (2002)Google Scholar
14. Han, H. S., Seo, S. Y., Shin, J.H., Appl. Phys. Lett., 79, 4568, (2001)Google Scholar
15. Han, H. S., Seo, S. Y., Shin, J.H., Park, N., Appl. Phys. Lett., 81, 3720 (2002)Google Scholar
16. Pacifici, D., Franzò, G., Priolo, F., Iacona, F., Dal Negro, L., Phys. Rev. B, 67, 245301 (2003)Google Scholar
17. Polman, A., Van Veggel, F.C.J.M., J. Opt. Soc. Am. B, 21, 5, 871 (2004)Google Scholar
18. Franzò, G., Boninelli, S., Pacifici, D., Priolo, F., Iacona, F., Bongiorno, C., Appl. Phys. Lett., 82, 3871 (2003)Google Scholar
19. Iacona, F., Franzò, G., Spinella, C., J. Appl. Phys., 87, 1295 (2000)Google Scholar
20. Christian, J.W., The Theory of Transformations in Metals and Alloys, 3rd Ed., Pergamon, Amsterdam, (2002).Google Scholar
21. Iacona, F., Bongiorno, C., Spinella, C., Boninelli, S., Priolo, F., J. Appl. Phys., 95, 3723 (2004)Google Scholar
22. Allan, G., Delerue, C., Lannoo, M., Phys. Rev. Lett., 78, 3161, (1997)Google Scholar