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A Comparative Study on the Differences in the Evolutions of Thin Film Morphologies of Co-Al Binary System: Molecular Dynamics Study

Published online by Cambridge University Press:  15 February 2011

Sang-Pil Kim
Affiliation:
Future Technology Research Division, Korea Institute of Science and Technology, Seoul 136-790, KOREA CPRC, Department of Ceramics, Hanyang University, Seoul 133-791, KOREA
Seung-Cheol Lee
Affiliation:
Future Technology Research Division, Korea Institute of Science and Technology, Seoul 136-790, KOREA
Kwang-Ryeol Lee
Affiliation:
Future Technology Research Division, Korea Institute of Science and Technology, Seoul 136-790, KOREA
Kyu-Hwan Lee
Affiliation:
Future Technology Research Division, Korea Institute of Science and Technology, Seoul 136-790, KOREA
Yong-Chae Chung
Affiliation:
CPRC, Department of Ceramics, Hanyang University, Seoul 133-791, KOREA
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Abstract

The morphology evolution of thin films was studied by molecular dynamics simulation. In this simulation four deposition and substrate elements combinations were used: Al on Al(001), Al on Co(001), Co on Co(001), Co on Al(001). The Al thin film was always grown by layer-bylayer mode regardless of substrates used. On the other hand, thin films formed by Co deposition depended on substrates used.While Co thin films on the Co substrates were grown by the island mode, a 3 monolayer (ML) thickness of CoAl surface compound was initially formed on Al substrate, before pure Co thin film growth occurred. In addition to the study on morphologies, the degrees of mixing of atoms in the interface were studied quantitatively. No surface mixing and a sharp interface were observed when Co was used as a substrate regardless of deposited atoms. On the contrary, a large amount of surface mixing or compound formation was observed when Al was used as a substrate.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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