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Computational Investigation of Selective Movpe of AlXGa1-XAs in Presence of Hcl

Published online by Cambridge University Press:  17 March 2011

Maria Nemirovskaya ,
Carlo Cavallotti  and
Klavs Jensen
Maria Nemirovskaya
Affiliation:
Dept. Chemical Engineering, Massachusetts Institute of Technology 77 Massachusetts Ave., Cambridge, MA 02139, U.S.A
Carlo Cavallotti
Affiliation:
Dept. Chemical Engineering, Massachusetts Institute of Technology 77 Massachusetts Ave., Cambridge, MA 02139, U.S.A
Klavs Jensen
Affiliation:
Dept. Chemical Engineering, Massachusetts Institute of Technology 77 Massachusetts Ave., Cambridge, MA 02139, U.S.A
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Abstract

The deposition of AlGaAs in the presence of HCl was investigated at the macroscopic and mesoscopic scales. Fluid dynamics simulations were first performed in order to study the dependence of the deposition rate on the operating conditions. Unknown gas phase and surface kinetic parameters were estimated by quantum chemistry and transition state computations. The fluxes of all species to the surface were thus computed and provided the input to a kinetic Monte Carlo model used to investigate the morphology evolution of the film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 696: Symposium N – Current Issues in Heteroepitaxial Growth--Stress Relaxation and Self Assembly , 2001 , T3.4
Copyright
Copyright © Materials Research Society 2002

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