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Correlation between Structural Properties and Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  03 September 2012

A. Kaschner ,
J. Holst ,
U. von Gfug ,
A. Hoffmann ,
F. Bertram ,
T. Riemann ,
D. Rudloff ,
P. Fischer ,
J. Christen  and
R. Averbeck
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A. Kaschner
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
J. Holst
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
U. von Gfug
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
A. Hoffmann
Affiliation:
Institut für Festkörperphysik, TU Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
F. Bertram
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
T. Riemann
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
D. Rudloff
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
P. Fischer
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
J. Christen
Affiliation:
Institut für Experimentelle Physik, Otto-von-Guericke-Universität, PO Box 4120, 39016 Magdeburg, Germany
R. Averbeck
Affiliation:
Infineon Technologies, Corporate Research, CPR 7, 81730 München, Germany
H. Riechert
Affiliation:
Infineon Technologies, Corporate Research, CPR 7, 81730 München, Germany
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Abstract

We comprehensively studied InGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) using a variety of methods of optical spectroscopy, such as cathodoluminescence microscopy (CL), time-integrated and time-resolved photoluminescence. To correlate the fluctuations in emission wavelength with values for the optical amplification we performed gain measurements in edge-stripe geometry. The lateral homogeneity can be drastically improved using a template of GaN grown on the sapphire substrate by metal-organic vapor phase epitaxy (MOVPE). Gain values up to 62 cm-1 were found in samples with low indium fluctuations, which is comparable to values for high-quality InGaN/GaN heterostructures grown by MOVPE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.34
Copyright
Copyright © Materials Research Society 1999

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