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Direct Writing and Lift-Off Patterning of Copper Lines at 200°C Maximum Process Temperature

Published online by Cambridge University Press:  10 February 2011

C. M. Hong ,
H. Gleskova  and
S. Wagner
C. M. Hong
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
H. Gleskova
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544, USA
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Abstract

We adapted a new technique for depositing copper lines, at a maximum process temperature of 200°C. The technique is based on the decomposition of copper hexanoate by UV light, followed by annealing in H2 [1]. A copper film resistivity of 8 μΩcm is obtained. We patterned this copper metallization on Corning 7059 glass substrates by three different techniques, including exposure through a shadow mask, lift-off of xerographic toner, and direct writing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 471: Symposium G – Flat Panel Display Materials III , 1997 , 35
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Avey, A.A. and Hill, R.H., J. Am. Chem. Soc. 118, 237 (1996).Google Scholar
2. Howard, W.E., J. SID 3/3, 127 (1995).Google Scholar
3. Dohjo, M., SID Intl. Symp. Digest Tech. Papers 1988, 330.Google Scholar
4. Fryer, P.M. et al., SID Intl. Symp. Digest Tech. Papers 1996. 333.Google Scholar
5. Sirringhaus, H., Kahn, A., and Wagner, S., Digest Tech. Papers AM-LCD'96(Kobe) 1996. 391.Google Scholar
6. Martin, R.L. and Waterman, H., J. Chem. Soc. 1957. 2545.Google Scholar
7. Graddon, D.P., J. Inorg. Nucl. Chem. 3, 222 (1961).Google Scholar
8. Palmer, B.J., Becalska, A., and Hill, R.H., J. Photochem. Photobiol. A: Chem. 57, 457 (1991).Google Scholar
9. Gleskova, H., Wagner, S., and Shen, D.S., IEEE Electron Device Lett. 16, 418 (1995).Google Scholar