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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

Published online by Cambridge University Press:  01 February 2011

Emilio Nogales ,
K. Lorenz ,
K. Wang ,
I.S. Roqan ,
R.W. Martin ,
K.P. O'Donnell ,
E. Alves ,
S. Ruffenach  and
O. Briot
Emilio Nogales
Affiliation:
emilio.nogales@fis.ucm.es, emilio.nogales@strath.ac.uk, University of Strathclyde, Department of Physics, John Anderson Building, 107 Rottenrow, Glasgow, N/A, G4 0NG, United Kingdom
K. Lorenz
Affiliation:
lorenz@itn.pt, Instituto Tecnológico e Nuclear, Sacavém, Portugal
K. Wang
Affiliation:
k.wang@strath.ac.uk, Department of Physics, University of Strathclyde
I.S. Roqan
Affiliation:
iman.roqan@strath.ac.uk, Department of Physics, University of Strathclyde
R.W. Martin
Affiliation:
r.w.martin@strath.ac.uk, Department of Physics, University of Strathclyde
K.P. O'Donnell
Affiliation:
k.p.odonnell@strath.ac.uk, Department of Physics, University of Strathclyde
E. Alves
Affiliation:
ealves@itn.mces.pt, Instituto Tecnológico e Nuclear, Sacavém, Portugal
S. Ruffenach
Affiliation:
ruffenach@epi.univ-montp2.fr, Groupe d’Etudes des Semiconducteurs, Univ. Montpellier II, Montpellier, France
O. Briot
Affiliation:
obriot@epi.univ-montp2.fr, Groupe d’Etudes des Semiconducteurs, Univ. Montpellier II, Montpellier, France
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Abstract

Integrated AlN nanocaps are used to protect gallium nitride epilayers during high temperature annealing treatments following high-energy implantation of rare earth (RE) ions. Cracks formed in thicker caps due to the lattice mismatch between AlN and GaN lead to the creation of microscopic surface defects at annealing temperatures higher than around 1200 °C. GaN dissociates locally to produce holes in the caps. Simultaneous cathodoluminescence/wavelength dispersive X-ray microanalysis in a modified electron probe microanalyzer allows study of the compositional and light emission variations near these microscopic defects. The intensity of the 5D0 – 7F2 transition related emission is enhanced and spectral changes can be observed, which indicate changes in the structure and/or composition of a very thin layer that forms the walls of holes in the caps. We also report some preliminary observations on the influence of the annealing atmosphere (nitrogen or ammonia) on cap damage.

Keywords

Euoptical propertieselectron microprobe
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF24-03
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES:

[1] Steckl, A.J., Heikenfeld, J.C., Lee, D.-S., Garter, M.J., Baker, C.C., Wang, Y. and Jones, R., IEEE J. Sel. Top. Quantum Electon. 8, 749 (2002)Google Scholar
[2] Favennec, P. N., Haridon, H. L., Salvi, M., Muotonnet, D., and Le Guillo, Y., Electron. Lett. 25, 718 (1989)Google Scholar
[3] Lorenz, K., Wahl, U., Alves, E., Dalmasso, S., Martin, R.W., O'Donnell, K.P., Ruffenach, S. and Briot, O., Appl. Phys. Lett. 85, 2712 (2004)CrossRefGoogle Scholar
[4] Fellows, J.A., Yeo, Y.K., Ryu, M.-Y., Hengehold, R.L., Solid State Communications 133, 213 (2005)CrossRefGoogle Scholar
[5] Zolper, J.C., Han, J., Biefeld, R.M., Van Deusen, S.B., Wampler, W.R., Reiger, D.J., Pearton, S.J., Williams, J.S., Tan, H.H., Karlicek, R.F. Jr., Stall, R.A., J. Electron. Mater. 27, 179 (1998)Google Scholar
[6] Nogales, E., Martin, R.W., O'Donnell, K.P., Lorenz, K., Alves, E., Ruffenach, S. and Briot, O., Appl. Phys. Lett. (accepted for publication)Google Scholar
[7] Martin, R.W., Edwards, P.R., O'Donnell, K.P., Mackay, E.G., and Watson, I.M., phys. stat. sol. (a) 192, 117 (2002)3.0.CO;2-W' href=https://dx.doi.org/10.1002/1521-396X(200207)192:1<117::AID-PSSA117>3.0.CO;2-W>CrossRef3.0.CO;2-W' href=https://scholar.google.com/scholar?q=[7]Martin,+R.W.,+Edwards,+P.R.,+O'Donnell,+K.P.,+Mackay,+E.G.,+and+Watson,+I.M.,+phys.+stat.+sol.+(a)192,+117+(2002)10.1002/1521-396X(200207)192:1<117::AID-PSSA117>3.0.CO;2-W>Google Scholar
[8] Bellet-Amalric, E., Adelmann, C., Sarigiannidou, E., Rouvière, J.L., Feuillet, G., Monroy, E. and Daudin, B., J. Appl. Phys. 95, 1127 (2004)CrossRefGoogle Scholar
[9] Scanning electron microscopy and X-Ray microanalysis, Goldstein, J.I., Newbury, D.E., Echlin, P., Joy, D.C., Roming, A.D., Lyman, C.E., Fiori, C. and Lifshin, E., Plenum, New York (1992)Google Scholar
[10] Heikenfeld, J., Garter, M., Lee, D. S., Birkhahn, R. and Steckl, A. J., Appl. Phys. Lett. 75, 1189 (1999)Google Scholar
[11] Katchkanov, V., O'Donnell, K. P., Dalmasso, S., Martin, R. W., Braud, A., Nakanishi, Y., Wakahara, A., and Yoshida, A., phys. stat. sol. (b) 242, 1491 (2005)CrossRefGoogle Scholar
[12] Wang, K., Martin, R.W., O'Donnell, K.P., Katchkanov, V., Nogales, E., Lorenz, K., Alves, E., Ruffenach, S., Briot, O., Appl. Phys. Lett. 87, 112107 (2005)CrossRefGoogle Scholar
[13] Bodiou, L., Oussif, A., Braud, A., Doualan, J-L, Moncorgé, R., Lorenz, K., Alves, E., Opt. Mater. (accepted for publication)Google Scholar
[14] Wang, K., Martin, R.W., Nogales, E., Katchkanov, V., O'Donnell, K.P., Hernandez, S., Lorenz, K., Alves, E., Ruffenach, S., Briot, O., Opt. Mater. (accepted for publication)Google Scholar
[15] Lorenz, K., Nogales, E., Nédélec, R., Penner, J., Vianden, R., Alves, E., Martin, R.W., O'Donnell, K.P., Mat. Res. Soc. Symp. Proc. Fall Meeting 2005 (sent for publication)Google Scholar